发明授权
- 专利标题： Active matrix substrate with removal of portion of insulating film overlapping source line and pixel electrode and method for producing the same
- 专利标题（中）： 有源矩阵基板去除部分绝缘膜重叠源极线和像素电极及其制造方法
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申请号： US839268申请日： 1997-04-17
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公开(公告)号： US6025892A公开(公告)日： 2000-02-15
- 发明人: Katsuhiro Kawai , Shinya Yamakawa , Masaya Okamoto , Mikio Katayama
- 申请人： Katsuhiro Kawai , Shinya Yamakawa , Masaya Okamoto , Mikio Katayama
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX8-100074 19960422; JPX9-053085 19970307
- 主分类号： G02F1/1333
- IPC分类号： G02F1/1333 ; G02F1/1343 ; G02F1/1345 ; G02F1/136 ; G02F1/1362 ; G02F1/1368 ; H01L29/786
摘要：
An active matrix substrate of the present invention includes: a substrate; a plurality of first lines formed on the substrate to be parallel to each other; an insulating film covering the first lines; a plurality of second lines formed on the substrate extending to cross the first lines with the insulating film interposed therebetween; a plurality of switching elements provided near respective crossings of the first lines and the second lines; and a plurality of pixel electrodes which are arranged in a matrix on the insulating film and which are connected to the switching elements, respectively. The insulating film is partially removed prior to forming the second lines and the pixel electrodes so that the removed portions of the insulating film correspond to the gaps.
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