公开(公告)号：US08981276B2

公开(公告)日：2015-03-17

申请号：US13523493

申请日：2012-06-14

申请人： Shinya Yamakawa

发明人： Shinya Yamakawa

IPC分类号： H01L27/00 ,  H01L27/146 ,  H04N5/355

CPC分类号： H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14692 ,  H04N5/3559

摘要： An imaging element includes a plurality of pixels. Each of the plurality of pixels includes the following element. A photoelectric transducer is disposed in each of the plurality of pixels and is configured to generate electric charge corresponding to received light. A storage unit has a predetermined capacitance and is configured to store therein electric charge transferred from the photoelectric transducer. A capacitor is disposed separate from a silicon substrate with an interlayer insulating film therebetween, the photoelectric transducer and the storage unit being formed in the silicon substrate. A connecting unit is disposed separate from the silicon substrate with the interlayer insulating film therebetween and is configured to connect the storage unit and the capacitor.

摘要翻译： 成像元件包括多个像素。 多个像素中的每一个包括以下元件。 光电换能器设置在多个像素中的每一个中，并且被配置为产生对应于接收的光的电荷。 存储单元具有预定电容并且被配置为存储从光电变换器传送的电荷。 电容器与硅衬底分离设置，其间具有层间绝缘膜，光电转换器和存储单元形成在硅衬底中。 连接单元与硅衬底分离设置，其间具有层间绝缘膜，并且被配置为连接存储单元和电容器。

公开(公告)号：US08975667B2

公开(公告)日：2015-03-10

申请号：US13618765

申请日：2012-09-14

申请人： Akiko Honjo ,  Shinya Yamakawa

发明人： Akiko Honjo ,  Shinya Yamakawa

IPC分类号： H01L31/00 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L31/1136 ,  H01L27/146 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463

摘要： A solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements.

摘要翻译： 一种固态成像装置，包括被配置为处理在光接收区域中捕获的电荷的有源元件，被配置为隔离有源元件的区域的元件隔离区域，被配置为围绕元件隔离区域的第一杂质区域和第二杂质 区域包括杂质浓度低于第一杂质区域的杂质区域，第二杂质区域设置在第一杂质区域和有源元件之间。

公开(公告)号：US20130099094A1

公开(公告)日：2013-04-25

申请号：US13618765

申请日：2012-09-14

申请人： Akiko Honjo ,  Shinya Yamakawa

发明人： Akiko Honjo ,  Shinya Yamakawa

IPC分类号： H01L31/113 ,  H01L27/146

CPC分类号： H01L31/1136 ,  H01L27/146 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463

摘要： A solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements.

摘要翻译： 一种固态成像装置，包括被配置为处理在光接收区域中捕获的电荷的有源元件，被配置为隔离有源元件的区域的元件隔离区域，被配置为围绕元件隔离区域的第一杂质区域和第二杂质 区域包括杂质浓度低于第一杂质区域的杂质区域，第二杂质区域设置在第一杂质区域和有源元件之间。

公开(公告)号：US20110241080A1

公开(公告)日：2011-10-06

申请号：US13070624

申请日：2011-03-24

申请人： Shinya Yamakawa

发明人： Shinya Yamakawa

IPC分类号： H01L27/148 ,  H01L31/18

CPC分类号： H01L27/14616 ,  H01L27/14614 ,  H01L27/14643 ,  H01L27/14689

摘要： Disclosed herein is a solid-state imaging device, including a plurality of unit pixels, wherein the plurality of unit pixels include: a photoelectric conversion element; a first transfer gate; a charge retaining region; a second transfer gate; and a floating diffusion region; a boundary part between the photoelectric conversion element and the charge retaining region having a structure of an overflow path formed at a potential determining a predetermined amount of charge, the overflow path transferring a charge by which the predetermined amount of charge is exceeded as a signal charge from the photoelectric conversion element to the charge retaining region, and the first transfer gate having two electrodes with different work functions as gate electrodes arranged above the overflow path and above the charge retaining region, respectively.

摘要翻译： 本文公开了一种固态成像装置，包括多个单位像素，其中多个单位像素包括：光电转换元件; 第一传输门; 电荷保持区域; 第二传输门; 和浮动扩散区; 在光电转换元件和电荷保持区域之间的边界部分，其具有形成在确定预定量的电荷的电位的溢出路径的结构，溢出路径传送超过预定量的电荷的电荷作为信号电荷 从光电转换元件到电荷保持区域，并且第一传输门具有分别具有布置在溢流路径上方和电荷保持区上方的具有不同功函数的两个电极作为栅电极。

公开(公告)号：US20110241079A1

公开(公告)日：2011-10-06

申请号：US13050156

申请日：2011-03-17

申请人： Yusuke Oike ,  Takahiro Kawamura ,  Shinya Yamakawa ,  Ikuhiro Yamamura ,  Takashi Machida ,  Yasunori Sogoh ,  Naoki Saka

发明人： Yusuke Oike ,  Takahiro Kawamura ,  Shinya Yamakawa ,  Ikuhiro Yamamura ,  Takashi Machida ,  Yasunori Sogoh ,  Naoki Saka

IPC分类号： H01L27/148 ,  H01L31/18

CPC分类号： H01L27/14612 ,  H01L27/14601 ,  H01L27/14616 ,  H01L27/14643 ,  H01L27/14656 ,  H01L27/14689 ,  H01L27/14806 ,  H01L27/14862 ,  H04N5/353 ,  H04N5/363 ,  H04N5/37452

摘要： Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

摘要翻译： 本文公开了一种固态成像装置，其包括光电转换元件，该光电转换元件可操作以根据入射光量产生电荷并在其内积累电荷;电荷保持区域，其中通过 通过光电转换元件的光电转换被保持直到读出，并且具有完全转移光电转换元件中的电荷的完整传输路径的传输门完全转移到电荷保持区域中，并且通过 在曝光期间由光电转换元件产生的电量超过预定电荷量的电荷转移到电荷保持区域中。 完整的传送路径和中间传送路径形成在不同的区域中。

公开(公告)号：US20110003417A1

公开(公告)日：2011-01-06

申请号：US12807215

申请日：2010-08-31

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L21/336 ,  H01L33/02

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线与绝缘膜相交，跨越所有栅极线。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

公开(公告)号：US20100167443A1

公开(公告)日：2010-07-01

申请号：US12658555

申请日：2010-02-11

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L33/00

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

公开(公告)号：US07696516B2

公开(公告)日：2010-04-13

申请号：US12283893

申请日：2008-09-16

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

公开(公告)号：US07459723B2

公开(公告)日：2008-12-02

申请号：US11450810

申请日：2006-06-08

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线都插入绝缘膜，与所有栅极线交叉。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

公开(公告)号：US06819379B2

公开(公告)日：2004-11-16

申请号：US09927547

申请日：2001-08-13

申请人： Masumi Kubo ,  Yozo Narutaki ,  Shogo Fujioka ,  Yuko Maruyama ,  Takayuki Shimada ,  Youji Yoshimura ,  Mikio Katayama ,  Yutaka Ishii ,  Shinya Yamakawa ,  Atsushi Ban

发明人： Masumi Kubo ,  Yozo Narutaki ,  Shogo Fujioka ,  Yuko Maruyama ,  Takayuki Shimada ,  Youji Yoshimura ,  Mikio Katayama ,  Yutaka Ishii ,  Shinya Yamakawa ,  Atsushi Ban

IPC分类号： G02F11335

CPC分类号： G02F1/133371 ,  G02F1/133504 ,  G02F1/133553 ,  G02F1/133555 ,  G02F1/134309 ,  G02F1/1362 ,  G02F2001/133557 ,  G02F2001/133638 ,  G02F2001/13712 ,  G02F2203/09

摘要： A liquid crystal display device includes a first substrate; a second substrate; a liquid crystal layer interposed between the first substrate and the second substrate; a first polarizer provided on a surface of the first substrate which is on the opposite side to the liquid crystal layer; a second polarizer provided on a surface of the second substrate which is on the opposite side to the liquid crystal layer; a first phase compensation element provided between the first polarizer and the liquid crystal layer; and a second phase compensation element provided between the second polarizer and the liquid crystal layer. A plurality of pixel areas are provided for display. The first substrate includes at least one transmissive electrode, and the second substrate includes a reflective electrode region and a transmissive electrode region in correspondence with each of the plurality of pixel areas.

摘要翻译： 液晶显示装置包括：第一基板; 第二基板; 插入在第一基板和第二基板之间的液晶层; 第一偏振器，设置在与液晶层相反的一侧的第一基板的表面上; 第二偏振器，设置在与液晶层相反的一侧的第二基板的表面上; 设置在所述第一偏振器和所述液晶层之间的第一相位补偿元件; 以及设置在第二偏光器和液晶层之间的第二相位补偿元件。 提供多个像素区域用于显示。 第一基板包括至少一个透射电极，并且第二基板包括与多个像素区域中的每一个对应的反射电极区域和透射电极区域。