发明授权
- 专利标题: Semiconductor type yaw rate sensor
- 专利标题(中): 半导体型偏航率传感器
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申请号: US106018申请日: 1998-06-29
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公开(公告)号: US6028332A公开(公告)日: 2000-02-22
- 发明人: Kazuhiko Kano , Makiko Fujita , Yoshinori Ohtsuka
- 申请人: Kazuhiko Kano , Makiko Fujita , Yoshinori Ohtsuka
- 申请人地址: JPX Kariya
- 专利权人: Denso Corporation
- 当前专利权人: Denso Corporation
- 当前专利权人地址: JPX Kariya
- 优先权: JPX9-174869 19970630
- 主分类号: G01L1/18
- IPC分类号: G01L1/18 ; G01C19/56 ; G01P15/00 ; G01P15/08 ; G01P15/12 ; G01P15/14 ; H01L29/84 ; H01L29/82
摘要:
A semiconductor type yaw rate sensor has a substrate, a beam structure formed from a semiconductor material and having at least one anchor portion disposed on the substrate, a weighted portion located above the substrate a predetermined gap therefrom, and a beam portion which extends from the anchor portion and supports the weighted portion. A movable electrode is formed onto the weighted portion, and a fixed electrode is formed on the substrate in such a manner that the fixed electrode faces the movable electrode. When a drive voltage is applied between the movable electrode and the fixed electrode, the beam structure is forcibly caused to vibrate in a direction that is horizontal relative to a substrate surface plane. In this yaw rate sensor, a strain gauge to monitor forced vibration of the beam structure is formed in the beam portion. As a result, the forced vibration of the beam structure can be monitored with a simple structure.
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