公开(公告)号：US6028332A

公开(公告)日：2000-02-22

申请号：US106018

申请日：1998-06-29

申请人： Kazuhiko Kano ,  Makiko Fujita ,  Yoshinori Ohtsuka

发明人： Kazuhiko Kano ,  Makiko Fujita ,  Yoshinori Ohtsuka

IPC分类号： G01L1/18 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/14 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01C19/5719 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10S73/01

摘要： A semiconductor type yaw rate sensor has a substrate, a beam structure formed from a semiconductor material and having at least one anchor portion disposed on the substrate, a weighted portion located above the substrate a predetermined gap therefrom, and a beam portion which extends from the anchor portion and supports the weighted portion. A movable electrode is formed onto the weighted portion, and a fixed electrode is formed on the substrate in such a manner that the fixed electrode faces the movable electrode. When a drive voltage is applied between the movable electrode and the fixed electrode, the beam structure is forcibly caused to vibrate in a direction that is horizontal relative to a substrate surface plane. In this yaw rate sensor, a strain gauge to monitor forced vibration of the beam structure is formed in the beam portion. As a result, the forced vibration of the beam structure can be monitored with a simple structure.

摘要翻译： 半导体型偏航率传感器具有基板，由半导体材料形成的梁结构，并且具有设置在基板上的至少一个锚固部分，位于基板上方的预定间隙的加权部分以及从基板延伸的梁部分 锚固部分​​并支撑加权部分。 可移动电极形成在加权部分上，并且固定电极以固定电极面向可动电极的方式形成在基板上。 当在可动电极和固定电极之间施加驱动电压时，梁结构被强制地沿相对于基板表面的水平方向振动。 在该横摆率传感器中，在梁部形成有用于监视梁结构的强制振动的应变仪。 结果，可以以简单的结构监视梁结构的强制振动。

公开(公告)号：US5922212A

公开(公告)日：1999-07-13

申请号：US663001

申请日：1996-06-07

申请人： Kazuhiko Kano ,  Kenichi Nara ,  Toshimasa Yamamoto ,  Nobuyuki Kato ,  Yoshitaka Gotoh ,  Yoshinori Ohtsuka ,  Kenichi Ao

发明人： Kazuhiko Kano ,  Kenichi Nara ,  Toshimasa Yamamoto ,  Nobuyuki Kato ,  Yoshitaka Gotoh ,  Yoshinori Ohtsuka ,  Kenichi Ao

IPC分类号： B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  C23F1/00

CPC分类号： G01P15/125 ,  B81B3/0072 ,  B81C1/00666 ,  G01P15/0802 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/017 ,  G01P2015/0814

摘要： A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.

摘要翻译： 公开了一种具有薄膜结构体的半导体传感器，其薄膜结构被防止由于厚度方向上的内部应力分布而弯曲。 在硅衬底上形成氧化硅膜作牺牲层，在氧化硅膜上形成多晶硅薄膜。 此后，将磷（P）离子注入多晶硅薄膜的表面，从而改变多晶硅薄膜的表面状态。 通过该变形例改变在多晶硅薄膜的厚度方向上存在的应力分布的一部分，并且调整应力分布。 通过去除氧化硅膜，多晶硅薄膜的可移动部件设置在硅衬底之上，其间插入间隙。

公开(公告)号：US5864064A

公开(公告)日：1999-01-26

申请号：US717405

申请日：1996-09-20

申请人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

发明人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

IPC分类号： G01P15/00 ,  G01H1/00 ,  G01P15/02 ,  G01P15/08 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P15/135 ,  G01P15/18

摘要： An acceleration sensor is constructed by a substrate, a cylindrical dead-weight movable electrode to be displaced by acceleration, a fixed electrode from the inside of which a cylinder is hollowed, a cylindrical anchor arranged on the substrate for supporting the dead-weight movable electrode with elastic transformable structural material and beams. When acceleration is applied from the outside, the cylindrical detecting face of the dead-weight movable electrode and the cylindrical detected face of the fixed electrode are in contact on a two-dimensional plane parallel to the substrate and the acceleration sensor detects the contact. A radial interval between the detecting face of the dead-weight movable electrode and the detected face of the fixed electrode is set in view of the elastic modulus of the beams so that external force can be detected isotropically and the acceleration sensor detects acceleration on a two-dimensional plane nondirectionally.

摘要翻译： 一个加速度传感器是由一个基板，一个被加速移位的一个圆柱形的自重的可移动电极构成的，一个固定的电极从一个圆柱体中空的一个固定的电极，一个设置在基板上的圆柱形的锚固件，用于支撑自重的可动电极 具有弹性可变形结构材料和梁。 当从外部施加加速度时，固定电极的圆柱形检测面和固定电极的圆柱形检测面在与基板平行的二维平面上接触，并且加速度传感器检测接触。 考虑到光束的弹性模量，设定了自重移动电极的检测面与固定电极的检测面之间的径向间隔，从而可以各向异性地检测外力，并且加速度传感器检测到二次加速度 非定向平面。

公开(公告)号：US5572057A

公开(公告)日：1996-11-05

申请号：US360940

申请日：1994-12-21

申请人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

发明人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/82

CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01

摘要： Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.

摘要翻译： 通过新的结构避免了由于半导体衬底和可移动电极之间的静电力引起的不利影响。 光束结构的可移动电极以指定的间隔设置在p型硅衬底上方。 每个由杂质扩散层构成的固定电极设置在p型硅衬底上的可移动电极的两侧; 这些固定电极相对于可动电极自对准。 可移动电极伴随着加速度的作用而移动，并且通过由该位移产生的固定电极之间的电流的变化（波动）来检测加速度。 另外，可动电极向上移动用的电极设置在可动电极的上方，在可动电极向上移动用的电极之间施加电位差，并且可移动电极对硅衬底的吸引力为 缓解

公开(公告)号：US06199430B1

公开(公告)日：2001-03-13

申请号：US09241137

申请日：1999-02-02

申请人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

发明人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

IPC分类号： G01P15125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18 ,  G01P2015/0817 ,  G01P2015/0828 ,  G01V1/181 ,  H01H1/0036

摘要： An acceleration sensor has a ring-shaped movable electrode connected to an anchor part via beams and a fixed electrode facing the ring-shaped movable electrode defining a specific interval, which are disposed on a substrate. The movable electrode is displaced by acceleration approximately in parallel to the substrate and contacts the fixed electrode, so that the acceleration is detected. The fixed electrode is divided into a detecting fixed electrode for contacting the movable electrode and a sensitivity controlling fixed electrode insulated from the detecting fixed electrode. Accordingly, potential differences between the movable electrode and the detecting fixed electrode and between the movable electrode and the sensitivity controlling fixed electrode are independently controlled to control sensitivity of acceleration.

摘要翻译： 加速度传感器具有环形可动电极，其经由梁和固定电极连接到锚定部分，固定电极面向限定特定间隔的环形可动电极，该固定电极设置在基板上。 可移动电极通过与基板大致平行的加速移位，并与固定电极接触，从而检测加速度。 固定电极被分成用于接触可动电极的检测固定电极和与检测固定电极绝缘的灵敏度控制固定电极。 因此，独立地控制可动电极和检测用固定电极之间以及可动电极与灵敏度控制固定电极之间的电位差，以控制加速度的灵敏度。

公开(公告)号：US5500549A

公开(公告)日：1996-03-19

申请号：US357258

申请日：1994-12-13

申请人： Yukihiro Takeuchi ,  Kozo Shibata ,  Yoshinori Ohtsuka ,  Kazuhiko Kano ,  Toshimasa Yamamoto

发明人： Yukihiro Takeuchi ,  Kozo Shibata ,  Yoshinori Ohtsuka ,  Kazuhiko Kano ,  Toshimasa Yamamoto

IPC分类号： G01P15/08 ,  B81B3/00 ,  B81C1/00 ,  G01C19/56 ,  G01C19/5755 ,  G01C19/5769 ,  G01P15/14 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01C19/5719 ,  G01P2015/0814 ,  Y10S73/01

摘要： A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.

摘要翻译： 半导体偏航率传感器，其可以通过IC制造工艺容易地构造，使得通过晶体管结构获得由于电流值引起的横摆率检测信号，并且公开了其制造方法。 由光束支撑的重量从半导体衬底的表面以规定的间隔设置，并且可动电极和激励电极与该重量一体地形成。 用于激发使用的固定电极对应于激发电极固定到基板。 与此同时，源电极和漏电极通过在与可动电极相对的位置的基板的表面上的扩散层形成，使得漏极电流随着可可电极的位移而变化 由于偏航率，并且由该电流检测到横摆率。

公开(公告)号：US09246461B2

公开(公告)日：2016-01-26

申请号：US13380995

申请日：2010-06-30

申请人： Morito Akiyama ,  Kazuhiko Kano ,  Akihiko Teshigahara

发明人： Morito Akiyama ,  Kazuhiko Kano ,  Akihiko Teshigahara

IPC分类号： C23C14/00 ,  H03H3/02 ,  C23C14/06

CPC分类号： H03H3/02 ,  C23C14/0036 ,  C23C14/0617 ,  C23C14/0641 ,  H01L41/316 ,  Y10T428/24355

摘要： A method for manufacturing a piezoelectric thin film including an aluminum nitride thin film containing scandium on a substrate, the method includes: sputtering step for sputtering aluminum and scandium under an atmosphere containing at least a nitrogen gas. In the sputtering step in the method according to the present invention, a scandium content rate falls within the range from 0.5% by atom to 50% by atom when a temperature of the substrate falls within the range from 5° C. to 450° C. during the sputtering step.

摘要翻译： 一种制造包括在基板上含有钪的氮化铝薄膜的压电薄膜的方法，所述方法包括：在至少含有氮气的气氛下溅射铝和钪的溅射步骤。 在根据本发明的方法的溅射步骤中，当基板的温度在5℃至450℃的范围内时，钪含量率在0.5原子％至50原子的范围内 在溅射步骤期间。

公开(公告)号：US20120000766A1

公开(公告)日：2012-01-05

申请号：US13171806

申请日：2011-06-29

申请人： Akihiko Teshigahara ,  Kazuhiko Kano ,  Morito Akiyama ,  Tatsuo Tabaru ,  Keiko Nishikubo

发明人： Akihiko Teshigahara ,  Kazuhiko Kano ,  Morito Akiyama ,  Tatsuo Tabaru ,  Keiko Nishikubo

IPC分类号： C23C14/34

CPC分类号： C23C14/0641 ,  C23C14/0036 ,  C23C14/3414

摘要： A method for manufacturing a scandium aluminum nitride film includes: sputtering a scandium aluminum alloy target under atmosphere including nitrogen gas so that a thin film is deposited on a substrate. Since the scandium aluminum nitride film is manufactured with using one alloy target, a composition of the film is maintained even when the sputtering time is long. Further, the above method is capable of being performed by a mass production sputtering apparatus.

摘要翻译： 制造氮化钪膜的方法包括：在包括氮气的气氛下溅射钪铝合金靶，使得在基板上沉积薄膜。 由于使用一种合金靶来制造氮化钪膜，所以即使在溅射时间长的情况下也能够保持膜的组成。 此外，上述方法能够通过大规模生产溅射装置进行。

公开(公告)号：US20100219910A1

公开(公告)日：2010-09-02

申请号：US12659197

申请日：2010-02-26

申请人： Hideaki Yamada ,  Kazuhiko Kano

发明人： Hideaki Yamada ,  Kazuhiko Kano

IPC分类号： H03H9/25

CPC分类号： H03H9/14547

摘要： A surface acoustic wave device is disclosed. The surface acoustic wave device includes: a substrate having a plane surface; multiple first electrodes formed on the plane surface of the substrate; and multiple second electrodes formed on the plane surface of the substrate. Each of the first and second electrodes has a predetermined closed ring shape. The first and second electrodes are concentric. The second electrodes are located radially inside or radially outside of the first electrodes.

摘要翻译： 公开了一种表面声波装置。 声表面波装置包括：具有平面的基板; 在基板的平面上形成多个第一电极; 以及形成在基板的平面上的多个第二电极。 第一和第二电极中的每一个具有预定的闭环形状。 第一和第二电极是同心的。 第二电极位于第一电极的径向内侧或径向外侧。

公开(公告)号：US07129176B2

公开(公告)日：2006-10-31

申请号：US10759025

申请日：2004-01-20

申请人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiro Takeuchi ,  Toshiyuki Morishita

发明人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiro Takeuchi ,  Toshiyuki Morishita

IPC分类号： H01L21/027

CPC分类号： H01L27/14625 ,  G02B6/4249 ,  H01L27/14627 ,  H01L27/14685

摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.

摘要翻译： 光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。 每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。 光学部件与基板一体化。 该光学部件具有高设计自由度。