公开(公告)号：US5824608A

公开(公告)日：1998-10-20

申请号：US671473

申请日：1996-06-27

申请人： Yoshitaka Gotoh ,  Makiko Fujita ,  Yukihiro Takeuchi

发明人： Yoshitaka Gotoh ,  Makiko Fujita ,  Yukihiro Takeuchi

IPC分类号： G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  G01P15/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

CPC分类号： B81B3/001 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0814

摘要： A polysilicon thin film is formed on a silicon substrate by LPCVD technique. At this time, by a performing film formation at a low temperature of approximately 620.degree. C., for example, an irregularities portion is formed on the surface thereof. A silicon oxide film that serves as a sacrificial layer is formed thereon and, on this sacrificial layer, a polysilicon thin film that serves as a movable portion forming thin film is formed. Then, the silicon oxide film beneath this polysilicon thin film is removed by wet etching to thereby form a movable portion. As a result, the movable portion of a beam structure that is composed of the thin film is disposed over the silicon substrate at a prescribed distance therefrom. Although an etchant-replacing liquid enters between the movable portion and the substrate whereby the movable portion is attracted toward the substrate, the movable portion is prevented from adhering to the substrate by means of the irregularities portion.

摘要翻译： 通过LPCVD技术在硅衬底上形成多晶硅薄膜。 此时，通过在约620℃的低温下进行成膜，例如，在其表面上形成凹凸部。 在其上形成用作牺牲层的氧化硅膜，并且在该牺牲层上形成用作可移动部分形成薄膜的多晶硅薄膜。 然后，通过湿蚀刻除去该多晶硅薄膜下方的氧化硅膜，从而形成可动部。 结果，由薄膜构成的光束结构的可动部分以规定的距离设置在硅衬底上。 尽管蚀刻剂置换液体进入到可动部分和基板之间，由此可动部分被吸引到基板上，但是通过不规则部分防止可移动部分粘附到基板上。

公开(公告)号：US6028332A

公开(公告)日：2000-02-22

申请号：US106018

申请日：1998-06-29

申请人： Kazuhiko Kano ,  Makiko Fujita ,  Yoshinori Ohtsuka

发明人： Kazuhiko Kano ,  Makiko Fujita ,  Yoshinori Ohtsuka

IPC分类号： G01L1/18 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/14 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01C19/5719 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10S73/01

摘要： A semiconductor type yaw rate sensor has a substrate, a beam structure formed from a semiconductor material and having at least one anchor portion disposed on the substrate, a weighted portion located above the substrate a predetermined gap therefrom, and a beam portion which extends from the anchor portion and supports the weighted portion. A movable electrode is formed onto the weighted portion, and a fixed electrode is formed on the substrate in such a manner that the fixed electrode faces the movable electrode. When a drive voltage is applied between the movable electrode and the fixed electrode, the beam structure is forcibly caused to vibrate in a direction that is horizontal relative to a substrate surface plane. In this yaw rate sensor, a strain gauge to monitor forced vibration of the beam structure is formed in the beam portion. As a result, the forced vibration of the beam structure can be monitored with a simple structure.

摘要翻译： 半导体型偏航率传感器具有基板，由半导体材料形成的梁结构，并且具有设置在基板上的至少一个锚固部分，位于基板上方的预定间隙的加权部分以及从基板延伸的梁部分 锚固部分​​并支撑加权部分。 可移动电极形成在加权部分上，并且固定电极以固定电极面向可动电极的方式形成在基板上。 当在可动电极和固定电极之间施加驱动电压时，梁结构被强制地沿相对于基板表面的水平方向振动。 在该横摆率传感器中，在梁部形成有用于监视梁结构的强制振动的应变仪。 结果，可以以简单的结构监视梁结构的强制振动。