发明授权
- 专利标题: Substrate processing apparatus
- 专利标题(中): 基板加工装置
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申请号: US78481申请日: 1998-05-14
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公开(公告)号: US06030457A公开(公告)日: 2000-02-29
- 发明人: Tomohisa Shimazu , Kenji Honma , Makoto Nakamura
- 申请人: Tomohisa Shimazu , Kenji Honma , Makoto Nakamura
- 申请人地址: JPX Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX9-145941 19970520
- 主分类号: H01L21/22
- IPC分类号: H01L21/22 ; C23C16/44 ; H01L21/205 ; C23C16/00
摘要:
In a vertical substrate processing apparatus including a vertical reaction vessel having an open lower end, a lid closing the open lower end of the reaction vessel, a rotation shaft extending through the lid to rotate a wafer boat in the reaction vessel, a bore formed in a casing disposed below the lid to receive the rotation shaft is sealed hermetically by a magnetic sealing unit, the leakage of a gas emanated from magnetic fluid of the magnetic sealing unit into the reaction vessel is suppressed during a LPCVD process and, if the vertical processing apparatus is used for both a LPCVD process and an oxidation process, the corrosion of the components of a rotating mechanism by HCl gas is prevented. To achieve such functions, the bore is evacuated through an exhaust passage opening in to the bore at a position on the side of the reaction vessel with respect to the magnetic sealing unit. The deposition of reaction byproducts on rotating members can be prevented by supplying an inert gas, such as N.sub.2 gas, through a gas supply passage when the bore is evacuated. When carrying out an oxidation process, a purging gas is supplied through the gas supply passage into the bore to prevent leakage of HCl gas into the bore.
公开/授权文献
- USD405936S Ice cream cone with handle 公开/授权日:1999-02-23
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