发明授权
US6030874A Doped polysilicon to retard boron diffusion into and through thin gate
dielectrics
失效
掺杂的多晶硅以阻止硼扩散进入并通过薄栅极电介质
- 专利标题: Doped polysilicon to retard boron diffusion into and through thin gate dielectrics
- 专利标题(中): 掺杂的多晶硅以阻止硼扩散进入并通过薄栅极电介质
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申请号: US7060申请日: 1998-01-13
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公开(公告)号: US6030874A公开(公告)日: 2000-02-29
- 发明人: Douglas T. Grider , Stanton P. Ashburn , Katherine E. Violette , F. Scott Johnson
- 申请人: Douglas T. Grider , Stanton P. Ashburn , Katherine E. Violette , F. Scott Johnson
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/28 ; H01L21/8238 ; H01L29/49 ; H01L29/51 ; H01L21/336
摘要:
An embodiment of the instant invention is a method of fabricating a semiconductor device which includes a dielectric layer situated between a conductive structure and a semiconductor substrate, the method comprising the steps of: forming the dielectric layer (layer 14) on the semiconductor substrate (substrate 12); forming the conductive structure (structure 18) on the dielectric layer; doping the conductive structure with boron; and doping the conductive structure with a dopant which inhibits the diffusion of boron. The semiconductor device may be a PMOS transistor or a capacitor. Preferably, the conductive structure is a gate structure. The dielectric layer is, preferably, comprised of a material selected from the group consisting of: an oxide, an oxide/oxide stack, an oxide/nitride stack, and an oxynitride. Preferably, the dopant which inhibits the diffusion of boron comprises at least one group III or group IV element. More specifically, it is preferably comprised of: carbon, germanium, and any combination thereof. Preferably, the steps of doping the conductive structure with boron and doping the conductive structure with a dopant which inhibits the diffusion of boron are accomplished substantially simultaneously, or the step of doping the conductive structure with boron is preformed prior to the step of doping the conductive structure with a dopant which inhibits the diffusion of boron are accomplished substantially simultaneously.
公开/授权文献
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