发明授权
- 专利标题： Oxide film fabrication method and electronic device
- 专利标题（中）： 氧化膜制作方法和电子器件
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申请号： US807175申请日： 1997-02-27
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公开(公告)号： US6033532A公开(公告)日： 2000-03-07
- 发明人: Hiroaki Minami
- 申请人： Hiroaki Minami
- 申请人地址： JPX Osaka
- 专利权人： Read-Rite SMI Corporation
- 当前专利权人： Read-Rite SMI Corporation
- 当前专利权人地址： JPX Osaka
- 优先权： JPX8-067279 19960227
- 主分类号： C23C14/08
- IPC分类号： C23C14/08 ; C23C14/34 ; C23C14/46 ; G11B5/31 ; G11B5/39 ; H01L21/203 ; H01L21/316
摘要：
A method of forming an oxide film over the substrate of an electronic device. In one embodiment, a first metal oxide film layer is deposited on the substrate of the electronic device by bias sputtering. Then, a second metal oxide film layer is deposited by ion beam sputtering on the first metal oxide film layer. In another embodiment, a first metal oxide film layer is deposited on the substrate of the electronic device by ion beam sputtering. Then, a second metal oxide film layer is deposited by bias sputtering on the first metal oxide film layer. In yet another embodiment, a first metal oxide film layer having a first degree of purity is deposited on the substrate of the electronic device. Then, a second metal oxide film layer having a second degree of purity is deposited on the first metal oxide film layer. The first degree of purity is different than the second degree of purity.