发明授权
US6033999A Method of solving contact oblique problems of an ILD layer using a rapid
thermal anneal
失效
使用快速热退火解决ILD层的接触倾斜问题的方法
- 专利标题： Method of solving contact oblique problems of an ILD layer using a rapid thermal anneal
- 专利标题（中）： 使用快速热退火解决ILD层的接触倾斜问题的方法
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申请号： US20584申请日： 1998-02-02
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公开(公告)号： US6033999A公开(公告)日： 2000-03-07
- 发明人: Jann-Ming Wu , Min-Hsiung Chiang , Jenn Ming Huang , Ming-Ta Lei
- 申请人： Jann-Ming Wu , Min-Hsiung Chiang , Jenn Ming Huang , Ming-Ta Lei
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/316 ; H01L21/768 ; H01L21/283
摘要：
A method of annealing an interlevel dielectric (IDL) layer 24 composed of PE-TEOS oxide before contact openings are formed in the ILD layer. The anneal prevents the contact openings 30 in IDL layer 24 from shifting and causing contact problems (contact oblique 33). The method begins by forming a first insulating layer 16 20 over a semiconductor structure 12. An ILD layer 24 composed of silicon oxide formed by a PECVD process using TEOS overlying the structure 12. In a key step, first rapid thermal anneal (RTA) is performed on the interlevel dielectric layer 24. The first RTA is preferably performed at a temperature in a range of between about 940 and 1100.degree. C. for a time in a range of between about 10 and 120 seconds. A contact hole 30 is then formed through the first insulating layer and the interlevel dielectric layer 24. The invention's first rapid thermal anneal prevents the ILD layer 24 from shrinking and shifting that distorts the contact hole 30.
公开/授权文献
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