发明授权
- 专利标题： Semiconductor laser device
- 专利标题（中）： 半导体激光器件
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申请号： US924826申请日： 1997-09-05
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公开(公告)号： US6044099A公开(公告)日： 2000-03-28
- 发明人: Masayuki Shono , Ryoji Hiroyama , Kouji Komeda , Toyozo Nishida , Yasuyuki Bessho
- 申请人： Masayuki Shono , Ryoji Hiroyama , Kouji Komeda , Toyozo Nishida , Yasuyuki Bessho
- 申请人地址： JPX Moriguchi
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JPX Moriguchi
- 优先权： JPX8-236798 19960906
- 主分类号： H01S3/22
- IPC分类号： H01S3/22 ; H01S5/16 ; H01S5/22 ; H01S5/223 ; H01S5/32 ; H01S5/34 ; H01S5/343 ; H01S3/085
摘要：
A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.
公开/授权文献
- USD333428S Bottle 公开/授权日：1993-02-23
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