发明授权
US6048791A Semiconductor device with electrode formed of conductive layer
consisting of polysilicon layer and metal-silicide layer and its
manufacturing method
失效
具有由多晶硅层和金属硅化物层组成的导电层形成的电极的半导体器件及其制造方法
- 专利标题： Semiconductor device with electrode formed of conductive layer consisting of polysilicon layer and metal-silicide layer and its manufacturing method
- 专利标题（中）： 具有由多晶硅层和金属硅化物层组成的导电层形成的电极的半导体器件及其制造方法
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申请号： US50357申请日： 1998-03-31
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公开(公告)号： US6048791A公开(公告)日： 2000-04-11
- 发明人: Tomio Katata , Katsuya Okumura
- 申请人： Tomio Katata , Katsuya Okumura
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28 ; H01L21/44 ; H01L21/4763
摘要：
A first TiSix layer is deposited on a polysilicon layer, then a silicon substrate is annealed in a vacuum atmosphere to crystallize the TiSix layer, and a second TiSix layer is provided on the first crystallized TiSix layer.
公开/授权文献
- USD390371S Seat 公开/授权日：1998-02-10
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