公开(公告)号：US06001718A

公开(公告)日：1999-12-14

申请号：US941253

申请日：1997-09-30

申请人： Tomio Katata ,  Katsuya Okumura

发明人： Tomio Katata ,  Katsuya Okumura

IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L21/321 ,  H01L23/52 ,  H01L29/78 ,  H01L21/4763

CPC分类号： H01L21/28061 ,  H01L21/28247 ,  H01L21/32105

摘要： A gate oxide film is formed on a silicon substrate, and a poly-silicon layer is formed on the gate oxide film. A tungsten silicide layer containing titanium is formed on the poly-silicon layer. A silicon nitride film is formed on the tungsten silicide layer. The poly-silicon layer, the tungsten silicide layer containing titanium, and the tungsten silicide layer containing titanium are subjected to patterning, and are thereafter, thermally oxidized to form oxide film on side walls of the layers. In this thermal oxidization, titanium deoxidizes and removes a native oxide film on the poly-silicon layer, so that silicon can be diffused from the poly-silicon layer to the tungsten silicide layer.

摘要翻译： 在硅衬底上形成栅极氧化膜，在栅氧化膜上形成多晶硅层。 在多晶硅层上形成含有钛的硅化钨层。 在硅化钨层上形成氮化硅膜。 将包含钛的多晶硅层，含硅化钨层和含有钛的硅化钨层进行图案化，然后在该层的侧壁上进行热氧化以形成氧化膜。 在该热氧化中，钛使多硅层上的自然氧化膜脱氧并除去，使得硅可以从多晶硅层扩散到硅化钨层。

公开(公告)号：US6048791A

公开(公告)日：2000-04-11

申请号：US50357

申请日：1998-03-31

申请人： Tomio Katata ,  Katsuya Okumura

发明人： Tomio Katata ,  Katsuya Okumura

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/28061

摘要： A first TiSix layer is deposited on a polysilicon layer, then a silicon substrate is annealed in a vacuum atmosphere to crystallize the TiSix layer, and a second TiSix layer is provided on the first crystallized TiSix layer.

摘要翻译： 第一TiSix层沉积在多晶硅层上，然后将硅衬底在真空气氛中退火以使TiSix层结晶，并且在第一结晶TiSix层上提供第二TiSix层。

公开(公告)号：US06566632B1

公开(公告)日：2003-05-20

申请号：US09503723

申请日：2000-02-15

申请人： Tomio Katata ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Tomio Katata ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H05B368

CPC分类号： H01L21/67248 ,  H01L21/67103 ,  H05B3/68

摘要： An electrostatic chuck type of hot plate is disclosed which permits the temperature of a semiconductor substrate to be measured with good repeatability. In addition to an electrostatic chuck electrode and a heating electrode as provided in conventional hot plates, the inventive hot plate is further provided with two or more temperature measuring probes.

摘要翻译： 公开了一种静电吸盘式热板，其允许以良好的重复性测量半导体衬底的温度。 除了常规热板中提供的静电吸盘电极和加热电极之外，本发明的热板还设置有两个或更多个温度测量探针。

公开(公告)号：US6071810A

公开(公告)日：2000-06-06

申请号：US997328

申请日：1997-12-23

申请人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76867 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有布线层的Si衬底上形成绝缘膜，形成与布线层连接的接触孔和绝缘膜中的布线槽，用Si 膜，依次在基板上形成Al膜和Ti膜，进行热处理，从而将Al膜替代为Ti膜，并使Si膜被Ti膜吸收，由此填充接触孔 和Al膜的布线槽，除去由Ti膜和多余Ti吸收Si膜形成的由Ti硅化物构成的Ti / Ti硅化物，由此用Al塞填充接触孔，并填充 布线槽与Al接线。

公开(公告)号：US06946387B2

公开(公告)日：2005-09-20

申请号：US10650974

申请日：2003-08-29

申请人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76867 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有布线层的Si衬底上形成绝缘膜，形成与布线层连接的接触孔和绝缘膜中的布线槽，用Si 膜，依次在基板上形成Al膜和Ti膜，进行热处理，从而将Al膜替代为Ti膜，并使Si膜被Ti膜吸收，由此填充接触孔 和Al膜的布线槽，除去由Ti膜和多余Ti吸收Si膜形成的由Ti硅化物构成的Ti / Ti硅化物，由此用Al塞填充接触孔，并填充 布线槽与Al接线。

公开(公告)号：US06673704B2

公开(公告)日：2004-01-06

申请号：US10189598

申请日：2002-07-08

申请人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L2140

CPC分类号： H01L21/76867 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有布线层的Si衬底上形成绝缘膜，形成与布线层连接的接触孔和绝缘膜中的布线槽，用Si 膜，依次在基板上形成Al膜和Ti膜，进行热处理，从而将Al膜替代为Ti膜，并使Si膜被Ti膜吸收，由此填充接触孔 和Al膜的布线槽，除去由Ti膜和多余Ti吸收Si膜形成的由Ti硅化物构成的Ti / Ti硅化物，由此用Al塞填充接触孔，并填充 布线槽与Al接线。

公开(公告)号：US06440843B1

公开(公告)日：2002-08-27

申请号：US09556961

申请日：2000-04-21

申请人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L2358

CPC分类号： H01L21/76867 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

公开(公告)号：US09034467B2

公开(公告)日：2015-05-19

申请号：US13192694

申请日：2011-07-28

申请人： Masamitsu Itoh ,  Katsuya Okumura ,  Taro Inada ,  Jun Watanabe

发明人： Masamitsu Itoh ,  Katsuya Okumura ,  Taro Inada ,  Jun Watanabe

IPC分类号： B32B7/12 ,  B08B7/00 ,  G03F7/20

CPC分类号： B08B7/0028 ,  B05D3/0254 ,  B05D5/00 ,  G03F7/707 ,  G03F7/70925 ,  Y10T428/28 ,  Y10T428/2848

摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

摘要翻译： 根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂 基质。

公开(公告)号：US20130313429A1

公开(公告)日：2013-11-28

申请号：US13954425

申请日：2013-07-30

申请人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Kenji Terao ,  Masahiro Hatakeyama ,  Katsuya Okumura

发明人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Kenji Terao ,  Masahiro Hatakeyama ,  Katsuya Okumura

IPC分类号： H01J37/26

CPC分类号： H01J37/265 ,  G01R31/307 ,  H01J37/04 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2594 ,  H01J2237/2817

摘要： Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

公开(公告)号：US08324726B2

公开(公告)日：2012-12-04

申请号：US11351338

申请日：2006-02-10

申请人： Katsuya Okumura ,  Yoshikazu Takahashi ,  Kazunori Takenouchi

发明人： Katsuya Okumura ,  Yoshikazu Takahashi ,  Kazunori Takenouchi

IPC分类号： H01L23/34

CPC分类号： H01L23/49811 ,  H01L23/49827 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40139 ,  H01L2224/40225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/351 ,  H05K1/115 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599

摘要： A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.

摘要翻译： 一种改善功率模块的热循环电阻和功率循环电阻的半导体器件。 在由陶瓷材料制成的支撑体上切割的多个穿孔中形成铜柱的电极部件被焊接到形成有发射极的IGBT的一侧。 通过将铜柱焊接到电极上，在IGBT中产生的热量转移到电极部件并被辐射。 此外，即使制造IGBT的材料和铜的热膨胀性不同，焊接界面上的应力降低，并且变形减小。 这样可以抑制裂纹的出现。 结果，可以提高功率模块的耐热循环电阻和功率循环电阻。