发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US272296申请日: 1999-03-19
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公开(公告)号: US6052301A公开(公告)日: 2000-04-18
- 发明人: Toshimi Ikeda , Kuninori Kawabata , Masato Takita
- 申请人: Toshimi Ikeda , Kuninori Kawabata , Masato Takita
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX10-185045 19980630
- 主分类号: H01L27/10
- IPC分类号: H01L27/10 ; G11C7/18 ; G11C8/14 ; H01L21/8242 ; H01L27/108 ; G11C5/06
摘要:
According to the present invention, the main word lines arranged in a row direction have a linear pattern shape, and in the region where sub word decoder circuits are formed, the pattern of the main word lines has a shape whereby the pattern branches and splits into a plurality of lines and then reconverges, in the direction of the row. In the region where the line splits, relatively small island-shaped patterns of the conducting layer are located, forming nodes which have a difference electric potential from the main word lines. The main word lines are constituted by a first metal conducting layer, similarly to the prior art. In other words, small island-shaped metal layer patterns, which are electrically different from the main word lines are formed inside the conducting metal layer pattern constituting the main word lines, similarly to island formed in the middle of a river, for example.
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