发明授权
US6054739A Semiconductor device having channel refractive index in first and second
directions
失效
半导体器件在第一和第二方向上具有沟道折射率
- 专利标题： Semiconductor device having channel refractive index in first and second directions
- 专利标题（中）： 半导体器件在第一和第二方向上具有沟道折射率
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申请号： US10486申请日： 1998-01-21
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公开(公告)号： US6054739A公开(公告)日： 2000-04-25
- 发明人: Shunpei Yamazaki , Naoto Kusumoto , Koichiro Tanaka
- 申请人： Shunpei Yamazaki , Naoto Kusumoto , Koichiro Tanaka
- 申请人地址： JPX Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa-ken
- 优先权： JPX6-333876 19941216
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/20 ; H01L21/268 ; H01L21/336 ; H01L21/77 ; H01L27/12 ; H01L29/04 ; H01L29/786 ; H01L21/26
摘要：
In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.
公开/授权文献
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