发明授权
- 专利标题: Electric solid state device and method for manufacturing the device
- 专利标题(中): 电固态器件及其制造方法
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申请号: US909733申请日: 1997-08-12
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公开(公告)号: US6054770A公开(公告)日: 2000-04-25
- 发明人: Hiroshi Toyoda , Jun-ichi Wada , Masahiko Hasunuma , Hisashi Kaneko
- 申请人: Hiroshi Toyoda , Jun-ichi Wada , Masahiko Hasunuma , Hisashi Kaneko
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX8-229444 19960813
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; H01L21/203 ; H01L21/3205 ; H01L21/768 ; H01L23/485 ; H01L23/532 ; H01L29/04 ; H01L29/41 ; H01L21/28 ; H01L21/44 ; H01L29/45
摘要:
An electric solid state device comprises a substrate, an amorphous thin film formed on the substrate, and a conductive thin film formed on the amorphous thin film. In this device, an interatomic distance calculated from a peak position of a halo pattern appearing in diffraction measurement of the material of the amorphous thin film is substantially equal to an interplanar space between those two adjacent specific crystal planes of the material of the conductive thin film, which are defined at least by respective atomic strings arranged in a predetermined direction in the respective planes and separated from each other by the smallest interatomic distance possible.
公开/授权文献
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