发明授权
- 专利标题： Process for cleaning the interior of semiconductor substrate
- 专利标题（中）： 清洗半导体衬底内部的工艺
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申请号： US54511申请日： 1998-04-03
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公开(公告)号： US6059887A公开(公告)日： 2000-05-09
- 发明人: Hisashi Muraoka , Hiroshi Tomita , Soichi Nadahara , Norio Kobayashi
- 申请人： Hisashi Muraoka , Hiroshi Tomita , Soichi Nadahara , Norio Kobayashi
- 申请人地址： JPX Yokohama JPX Kawasaki JPX Tokyo
- 专利权人： Purex Co., Ltd.,Kabushiki Kaisha Toshiba,Toshiba Ceramics Co., Ltd.
- 当前专利权人： Purex Co., Ltd.,Kabushiki Kaisha Toshiba,Toshiba Ceramics Co., Ltd.
- 当前专利权人地址： JPX Yokohama JPX Kawasaki JPX Tokyo
- 优先权： JPX9-101030 19970403
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; H01L21/322 ; C03C23/00
摘要：
A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.
公开/授权文献
- USD400521S Computer monitor with a computer generated icon 公开/授权日：1998-11-03