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334 条记录 (耗时 0.03 秒)

    Process for cleaning the interior of semiconductor substrate
    1.
    发明授权
    Process for cleaning the interior of semiconductor substrate 失效
    清洗半导体衬底内部的工艺

    公开(公告)号：US6059887A

    公开(公告)日：2000-05-09

    申请号：US54511

    申请日：1998-04-03

    申请人： Hisashi Muraoka ,  Hiroshi Tomita ,  Soichi Nadahara ,  Norio Kobayashi

    发明人： Hisashi Muraoka ,  Hiroshi Tomita ,  Soichi Nadahara ,  Norio Kobayashi

    IPC分类号： H01L21/304 ,  H01L21/322 ,  C03C23/00

    CPC分类号： H01L21/3221

    摘要： A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.

    摘要翻译： 提供了清洗其中含有金属杂质的半导体衬底的内部的工艺。 加热半导体衬底，其一侧或其两侧在高温下与金属或无机盐的熔体接触，使得熔体不与这些半导体反应，并且半导体不熔化。 通过该处理，存在于基板内的杂质从基板中除去，其内部被清洁。

    Polishing method and apparatus
    2.
    发明授权
    Polishing method and apparatus 有权
    抛光方法和设备

    公开(公告)号：US06667238B1

    公开(公告)日：2003-12-23

    申请号：US09545504

    申请日：2000-04-07

    申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

    发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

    IPC分类号： H01L2100

    CPC分类号： B24B37/345

    摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

    摘要翻译： 抛光装置用于化学机械抛光形成在诸如半导体晶片的基板上的铜（Cu）层，然后清洁抛光的基板。 抛光装置具有研磨部，该研磨部具有带有抛光面的转盘和用于保持基板的顶环，并将基板按压在研磨面上，以对其上具有半导体器件的表面进行抛光;以及清洗部， 被抛光 清洗部具有电解供水装置，用于向基板供给电解水，以清洗基板的抛光表面，同时向基板供应电解水。

    Wafer drying apparatus and method with residual particle removability enhancement
    3.
    发明授权
    Wafer drying apparatus and method with residual particle removability enhancement 失效
    晶圆干燥装置和残留颗粒去除性提高方法

    公开(公告)号：US06286524B1

    公开(公告)日：2001-09-11

    申请号：US09257384

    申请日：1999-02-25

    申请人： Hisashi Okuchi ,  Hiroshi Tomita ,  Soichi Nadahara ,  Katsuya Okumura

    发明人： Hisashi Okuchi ,  Hiroshi Tomita ,  Soichi Nadahara ,  Katsuya Okumura

    IPC分类号： B08B704

    CPC分类号： H01L21/67034 ,  Y10S134/902

    摘要： A wafer dry cleaning method and apparatus capable of eliminating or suppressing adhesion of dust and particles on dried wafer surfaces while minimizing generation of water marks thereon. To achive this, the wafer dryer apparatus is configured including a surface cleaning/drying chamber structure which houses therein a set of spaced-apart silicon wafer workpieces. The dry chamber is operatively associated with a vacuum evacuation device for retaining the interior of this chamber at low pressures required. A water-drain device is provided for forcing water content separated off from the wafer surfaces to drain out of the drying vessel. During such wafer drying process, the wafers may be driven rotating at high speeds to thereby accelerate centrifugal spin-off of residual drops of water on wafer surfaces. Preferably, a chosen purge gas may be fed into the chamber during wafer rotation. The purge gas supply gets started substantially simultaneously upon activation of a vacuum pump for chamber evacuation, or after completion of such vacuum evacuation. In one illustrative embodiment ultrapure water may be used to rinse the wafers in the chamber.

    摘要翻译： 一种晶片干洗方法和装置，其能够消除或抑制灰尘和颗粒在干燥的晶片表面上的粘附，同时最小化其上的水痕的产生。 为了实现这一点，晶片干燥装置被构造成包括其中容纳一组间隔开的硅晶片工件的表面清洁/干燥室结构。 干燥室与真空排气装置可操作地相关联，用于将该室的内部保持在所需的低压。 设置排水装置，用于迫使从晶片表面分离的含水量从干燥容器排出。 在这样的晶片干燥过程中，晶片可被驱动高速旋转，从而加速晶片表面上剩余的水滴离心分离。 优选地，在晶片旋转期间可以将所选择的吹扫气体进料到室中。 在用于室抽真空的真空泵激活时或在完成这种真空排气之后，净化气体供应基本上同时启动。 在一个说明性实施例中，可以使用超纯水冲洗腔室中的晶片。

    Semiconductor device in trench
    7.
    发明授权
    Semiconductor device in trench 失效
    沟槽中的半导体器件

    公开(公告)号：US06639317B2

    公开(公告)日：2003-10-28

    申请号：US10188871

    申请日：2002-07-05

    申请人： Hiroshi Tomita ,  Soichi Nadahara

    发明人： Hiroshi Tomita ,  Soichi Nadahara

    IPC分类号： H01L23528

    CPC分类号： H01L21/32134 ,  H01L21/67075 ,  H01L28/65

    摘要： In the etching method, ozone water containing an oxidation agent having an oxidation-reduction potential of 2V or more is supplied onto a metal compound film such as SrRuO film or the like, and the metal compound film is etched by oxidation-reduction reaction involving oxygen. The metal compound film, which is conventionally removed by a physical removal method, can be easily removed by wet etching. Manufacture of a capacitor containing an SrRuO film and the like can thus be facilitated.

    摘要翻译： 在蚀刻方法中，将含有氧化还原电位为2V以上的氧化剂的臭氧水供给到诸如SrRuO膜等的金属化合物膜上，并且通过涉及氧的氧化还原反应蚀刻金属化合物膜 。 通过物理去除方法通常去除的金属化合物膜可以通过湿蚀刻容易地除去。 因此，容易制造含有SrRuO膜的电容器等。

    Apparatus and method for cleaning a semiconductor substrate
    8.
    发明授权
    Apparatus and method for cleaning a semiconductor substrate 失效
    用于清洁半导体衬底的装置和方法

    公开(公告)号：US06431185B1

    公开(公告)日：2002-08-13

    申请号：US09401864

    申请日：1999-09-22

    申请人： Hiroshi Tomita ,  Soichi Nadahara ,  Motoyuki Sato

    发明人： Hiroshi Tomita ,  Soichi Nadahara ,  Motoyuki Sato

    IPC分类号： B08B600

    CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B2203/0288 ,  Y10S134/902

    摘要： There is proposed an apparatus and method for cleaning a semiconductor substrate, which make it possible to minimize the adhesion of mist in a cleaning tank at the occasion of cleaning a semiconductor substrate, to realize a high removal effect of residual polishing particles, and to enable to obtain a clean surface. In view of preventing a mist generated by the jet of high pressure water from re-adhering to the substrate during the cleaning of a semiconductor substrate, a cover member is disposed at a mist-generating region so as to prevent the splash of the mist. Additionally, a cavity is caused to generate by contacting a high pressure water with a still water, and high-frequency generated by the generation of the cavity is utilized for removing the residual polishing particles. Alternatively, the ejection of high pressure water against the surface of the substrate is performed in a liquid phase such as ultrapure water, thereby preventing the generation of mist.

    摘要翻译： 提出了一种用于清洁半导体衬底的装置和方法，这使得可以在清洁半导体衬底的情况下最小化清洗槽中的雾的粘附性，以实现残留的抛光颗粒的高的去除效果，并且使得能够 以获得干净的表面。 考虑到在清洁半导体衬底期间防止高压水射流产生的雾再次粘附到衬底上，在雾化产生区域处设置一个盖构件，以防止雾沫的飞溅。 此外，通过使高压水与静止水接触而产生空腔，并且通过产生空腔产生的高频被用于去除残留的抛光颗粒。 或者，将高压水喷射到基板的表面，以超纯水等液相进行，从而防止产生雾。