发明授权
- 专利标题: Method of forming insulation films for liquid crystal display
- 专利标题(中): 形成液晶显示屏绝缘膜的方法
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申请号: US132895申请日: 1998-08-12
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公开(公告)号: US6060130A公开(公告)日: 2000-05-09
- 发明人: Jung-Ha Kim
- 申请人: Jung-Ha Kim
- 申请人地址: KRX Seoul
- 专利权人: LG Electronics Inc.
- 当前专利权人: LG Electronics Inc.
- 当前专利权人地址: KRX Seoul
- 优先权: KRX97-57622 19971103
- 主分类号: G02F1/13
- IPC分类号: G02F1/13 ; H01L21/312 ; H01L21/314 ; H01L21/316 ; B05D3/06
摘要:
A method for forming a silicon oxide film, SiO.sub.x, where X=1 or 2, on an electrode of a thin film transistor, e.g., for a liquid crystal display device. The method includes the steps of: forming an electrode on a substrate; forming an organic silicon-containing thin film on exposed surfaces of the electrode and the substrate; providing a gaseous atmosphere of oxygen or air about the electrode and the substrate; and irradiating the thin film with ultra violet light to produce radicals, including silicon radicals, from the thin film. The irradiation also produces oxygen radicals from the atmosphere. The silicon and oxygen radicals react to form the silicon oxide.
公开/授权文献
- US5419556A Golf club head 公开/授权日:1995-05-30