发明授权
US6060131A Method of forming a thin film by plasma chemical vapor deposition
失效
通过等离子体化学气相沉积法形成薄膜的方法
- 专利标题: Method of forming a thin film by plasma chemical vapor deposition
- 专利标题(中): 通过等离子体化学气相沉积法形成薄膜的方法
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申请号: US19769申请日: 1998-02-06
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公开(公告)号: US6060131A公开(公告)日: 2000-05-09
- 发明人: Masayasu Suzuki , Noritaka Akita , Yoshihiro Hashimoto
- 申请人: Masayasu Suzuki , Noritaka Akita , Yoshihiro Hashimoto
- 申请人地址: JPX Kyoto
- 专利权人: Shimadzu Corporation
- 当前专利权人: Shimadzu Corporation
- 当前专利权人地址: JPX Kyoto
- 主分类号: B01J19/08
- IPC分类号: B01J19/08 ; C23C16/50 ; C23C16/511 ; C23C16/515 ; C23C16/517 ; H01J37/32 ; C23C16/44
摘要:
A substrate to be coated with a thin film is placed inside a vacuum chamber, an ECR plasma is generated and introduced into the vacuum chamber by means of a specified magnetic field generated inside the vacuum chamber and a reaction gas, as well as an inert gas, is introduced into the vacuum chamber while a negative DC voltage superposed with a high-frequency pulse with frequency 25-250 kHz is applied to the substrate by a voltage applying device such that the voltage of the substrate reaches a positive value instantaneously. The frequency of the superposed pulse is selected by using an ammeter to determine an optimum frequency for minimizing the load current of the voltage-applying circuit.
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