公开(公告)号：US08183122B2

公开(公告)日：2012-05-22

申请号：US12838206

申请日：2010-07-16

申请人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L21/76

CPC分类号： H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L23/544 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/78675 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

摘要翻译： 促进在非晶或多晶膜中形成的再结晶区域的精确取向。 形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。 此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。 因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记 在结晶区域上的预定位置。

公开(公告)号：US20100304546A1

公开(公告)日：2010-12-02

申请号：US12838206

申请日：2010-07-16

申请人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L21/02

CPC分类号： H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L23/544 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/78675 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

摘要翻译： 促进在非晶或多晶膜中形成的再结晶区域的精确取向。 形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。 此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。 因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记 在结晶区域上的预定位置。

公开(公告)号：US20080290300A1

公开(公告)日：2008-11-27

申请号：US11926893

申请日：2007-10-29

申请人： Noritaka AKITA ,  Yoshio TAKAMI

发明人： Noritaka AKITA ,  Yoshio TAKAMI

IPC分类号： G21K5/04

CPC分类号： B23K26/0613 ,  B23K26/066 ,  H01L21/02381 ,  H01L21/02675 ,  Y10T117/1004

摘要： A crystallization apparatus is provided. In the crystallization apparatus, a light intensity distribution formed by a light modulation device or a metal aperture and transferred to a processed substrate can be visualized. The crystallization apparatus has an ultraviolet (UV) irradiation system and a visible light irradiation system. The UV irradiation system irradiates pulses of laser beam in the UV range to the processed substrate. The visible light irradiation system continuously irradiates a visible light laser beam on the same irradiated region on the processed substrate. In a melted region resulted from the uniform irradiation of the laser beam in the UV range, the light intensity distribution of the visible laser beam is used to form crystal growth. The crystallization apparatus irradiates pulses of the laser beam in the UV range to melt the processed substrate, and continuously irradiates the visible light laser beam to crystallize the processed substrate.

摘要翻译： 提供结晶装置。 在结晶装置中，可以观察到由光调制装置或金属孔径形成并转移到处理过的基板的光强度分布。 结晶装置具有紫外线（UV）照射系统和可见光照射系统。 UV照射系统将UV范围内的激光束的脉冲照射到被处理的基板。 可见光照射系统在可处理基板上的相同照射区域上连续照射可见光激光束。 在UV范围内由于激光束的均匀照射而产生的熔融区域中，使用可见激光束的光强度分布来形成晶体生长。 结晶装置照射UV范围内的激光束的脉冲，使被处理基板熔化，并连续地照射可见光激光束，使经处理的基板结晶。

公开(公告)号：US06268582B1

公开(公告)日：2001-07-31

申请号：US09502488

申请日：2000-02-11

申请人： Noritaka Akita ,  Satoko Ishii

发明人： Noritaka Akita ,  Satoko Ishii

IPC分类号： B23K1000

CPC分类号： H01J37/32192 ,  H01J37/32678 ,  H01J37/32706

摘要： An ECR plasma CVD apparatus includes a cavity for producing an ECR plasma, a vacuum chamber connected to the cavity, a base plate holder for holding a base plate or substrate, an electrode plate, and a high frequency applying device for applying a high frequency current to the electrode plate. The electrode plate is disposed on a side opposite to the cavity with the base plate therebetween. The base plate is arranged parallel to the electrode plate with a predetermined space therebetween to generate an electrostatic coupling in the vacuum chamber. A high frequency current is applied to the electrode plate, so that the RF bias can be uniformly applied to the surface of a non-conductive base plate without contacting to thereby uniformly form a CVD membrane thereon.

摘要翻译： ECR等离子体CVD装置包括用于产生ECR等离子体的空腔，连接到空腔的真空室，用于保持基板或基板的基板保持件，电极板和用于施加高频电流的高频施加装置 到电极板。 电极板设置在与空腔相对的一侧，其间具有基板。 基板平行于电极板设置有预定的间隔，以在真空室中产生静电耦合。 向电极板施加高频电流，使得RF偏压能够均匀地施加到不导电基板的表面，而不会使其均匀地形成CVD膜。

公开(公告)号：US6060131A

公开(公告)日：2000-05-09

申请号：US19769

申请日：1998-02-06

申请人： Masayasu Suzuki ,  Noritaka Akita ,  Yoshihiro Hashimoto

发明人： Masayasu Suzuki ,  Noritaka Akita ,  Yoshihiro Hashimoto

IPC分类号： B01J19/08 ,  C23C16/50 ,  C23C16/511 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32 ,  C23C16/44

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32678 ,  H01J37/32935

摘要： A substrate to be coated with a thin film is placed inside a vacuum chamber, an ECR plasma is generated and introduced into the vacuum chamber by means of a specified magnetic field generated inside the vacuum chamber and a reaction gas, as well as an inert gas, is introduced into the vacuum chamber while a negative DC voltage superposed with a high-frequency pulse with frequency 25-250 kHz is applied to the substrate by a voltage applying device such that the voltage of the substrate reaches a positive value instantaneously. The frequency of the superposed pulse is selected by using an ammeter to determine an optimum frequency for minimizing the load current of the voltage-applying circuit.

摘要翻译： 将要涂覆薄膜的基板放置在真空室内，产生ECR等离子体并通过在真空室内产生的规定磁场和反应气体以及惰性气体将其引入真空室 被引入真空室中，同时通过电压施加装置将叠加有频率为25-250kHz的高频脉冲的负DC电压施加到衬底上，使得衬底的电压瞬时达到正值。 通过使用电流表来选择叠加脉冲的频率，以确定用于最小化施加电压的负载电流的最佳频率。

公开(公告)号：US07803520B2

公开(公告)日：2010-09-28

申请号：US11681030

申请日：2007-03-01

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Noritaka Akita

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Noritaka Akita

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0268 ,  B23K26/073 ,  C30B13/24 ,  G02B27/0927 ,  G02B27/0961 ,  H01L21/02595 ,  H01L21/2026 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.

摘要翻译： 本发明包括光调制光学系统，其具有形成对入射光束的期望光强度梯度分布的第一元件和形成具有相反峰值形状的期望光强度最小分布的第二元件，以及图像 形成光学系统，其设置在光调制光学系统和具有多晶半导体膜或非晶半导体膜的基板之间，其中形成有光强度梯度分布和光强度最小分布的入射光束被施加到 多晶半导体膜或通过图像形成光学系统的非晶半导体膜，从而使非晶半导体膜结晶。 第一元件的图案与第二元件的图案相反。

公开(公告)号：US07405141B2

公开(公告)日：2008-07-29

申请号：US11679724

申请日：2007-02-27

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： H01L21/268

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲振荡准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测， 并且当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置，以进行结晶。

公开(公告)号：US07318865B2

公开(公告)日：2008-01-15

申请号：US11006732

申请日：2004-12-08

申请人： Noritaka Akita ,  Yoshio Takami

发明人： Noritaka Akita ,  Yoshio Takami

IPC分类号： C30B25/12

CPC分类号： B23K26/0861 ,  B23K26/04 ,  B23K26/066 ,  B23K2101/40 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1008

摘要： A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used as a references, applying a modulated light beam to a predetermined area of the processed substrate supported by the substrate stage and crystallizing the area, and forming at least one circuit element in the crystallized area of the processed substrate subjected to positioning with the positioning mark being used as a reference.

摘要翻译： 电子设备的制造方法包括：将处理过的基板相对于结晶装置的基板台定位，并将预先设置在已处理基板上的至少一个定位标记作为基准来对其进行支撑，将经调制的光束施加到 处理基板的预定区域由基板台支撑并使该区域结晶，并且在经过定位的处理基板的结晶区域中形成至少一个电路元件作为基准。

公开(公告)号：US07247813B2

公开(公告)日：2007-07-24

申请号：US11246265

申请日：2005-10-11

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： B23K26/00 ,  H01L21/268

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulseoscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲激光准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测，并且 当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置以进行结晶。

公开(公告)号：US20060043258A1

公开(公告)日：2006-03-02

申请号：US11178562

申请日：2005-07-12

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

IPC分类号： G02B7/04

CPC分类号： G02B27/40 ,  B23K26/705 ,  G01J1/04 ,  G01J1/0411 ,  G01J1/0448 ,  G01J1/4257 ,  G02B7/36

摘要： A knife edge is disposed at a height corresponding to a section on which a sectional image (light intensity distribution) is picked up in such a manner as to intercept a part of the section of the laser light. The knife edge is irradiated with the laser light, and the sectional image of the laser light is enlarged with an image forming optics, and is picked up by a CCD. While picking up the sectional image in this manner, focusing of the image forming optics is performed. Next, the knife edge is retracted from the optical path of the laser light, the laser light is allowed to enter the CCD via the image forming optics, and the sectional image of the laser light is picked up.

摘要翻译： 刀刃设置在与截面图像（光强度分布）被拾取的部分相对应的高度处，以截取激光的一部分的一部分。 用激光照射刀刃，用成像光学元件放大激光的截面图像，并用CCD拾取。 以这种方式拾取截面图像时，执行成像光学元件的聚焦。 接下来，刀刃从激光的光路缩回，允许激光经由图像形成光学器件进入CCD，并且拾取激光的截面图像。