发明授权
US6060709A Apparatus and method for depositing uniform charge on a thin oxide
semiconductor wafer
失效
在薄氧化物半导体晶片上沉积均匀电荷的装置和方法
- 专利标题： Apparatus and method for depositing uniform charge on a thin oxide semiconductor wafer
- 专利标题（中）： 在薄氧化物半导体晶片上沉积均匀电荷的装置和方法
-
申请号： US1488申请日： 1997-12-31
-
公开(公告)号： US6060709A公开(公告)日： 2000-05-09
- 发明人: Roger L. Verkuil , Gregory S. Horner , Tom G. Miller
- 申请人： Roger L. Verkuil , Gregory S. Horner , Tom G. Miller
- 专利权人： Verkuil; Roger L.,Horner; Gregory S.,Miller; Tom G.
- 当前专利权人： Verkuil; Roger L.,Horner; Gregory S.,Miller; Tom G.
- 主分类号： H01T19/00
- IPC分类号： H01T19/00 ; H01T19/04
摘要：
A conductive slit screen is placed between a corona gun and the surface of a semiconductor wafer. The charge deposited on the wafer by the gun is controlled by a potential applied to the screen. A chuck orients the wafer in close proximity to the screen. A desired charge is applied to the wafer by depositing alternating polarity corona charge until the potential of the wafer equals the potential of the screen.
公开/授权文献
- US5389443A In-mold coating with improved toughness 公开/授权日：1995-02-14
信息查询
