Contactless total charge measurement with corona
    2.
    发明授权
    Contactless total charge measurement with corona 有权
    非接触式电荷测量

    公开(公告)号:US06448804B2

    公开(公告)日:2002-09-10

    申请号:US09964944

    申请日:2001-09-27

    IPC分类号: G01R3126

    摘要: A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer, and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.

    摘要翻译: 测量半导体衬底上的绝缘层的总电荷的方法包括对绝缘层施加电晕电荷,以及在施加每个电晕电荷之后测量绝缘层的表面光电压。 用库仑计测量每个电晕电荷的电荷密度。 确定获得预定固定值的表面光电压所需的总电晕电荷,并用于计算绝缘层的总电荷。 固定值对应于平带或中频带条件。

    Contactless method for measuring total charge of an insulating layer on a substrate using corona charge
    4.
    发明授权
    Contactless method for measuring total charge of an insulating layer on a substrate using corona charge 失效
    用于使用电晕电荷测量衬底上的绝缘层的总电荷的非接触式方法

    公开(公告)号:US06191605B1

    公开(公告)日:2001-02-20

    申请号:US08912697

    申请日:1997-08-18

    IPC分类号: G01R3126

    摘要: A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.

    摘要翻译: 测量半导体衬底上的绝缘层的总电荷的方法包括在绝缘层上施加电晕电荷,并在施加每个电晕电荷之后测量绝缘层的表面光电压。 用库仑计测量每个电晕电荷的电荷密度。 确定获得预定固定值的表面光电压所需的总电晕电荷,并用于计算绝缘层的总电荷。 固定值对应于平带或中频带条件。

    Apparatus and method for depositing uniform charge on a thin oxide
semiconductor wafer
    6.
    发明授权
    Apparatus and method for depositing uniform charge on a thin oxide semiconductor wafer 失效
    在薄氧化物半导体晶片上沉积均匀电荷的装置和方法

    公开(公告)号:US6060709A

    公开(公告)日:2000-05-09

    申请号:US1488

    申请日:1997-12-31

    IPC分类号: H01T19/00 H01T19/04

    CPC分类号: H01T19/00

    摘要: A conductive slit screen is placed between a corona gun and the surface of a semiconductor wafer. The charge deposited on the wafer by the gun is controlled by a potential applied to the screen. A chuck orients the wafer in close proximity to the screen. A desired charge is applied to the wafer by depositing alternating polarity corona charge until the potential of the wafer equals the potential of the screen.

    摘要翻译: 导电狭缝屏幕放置在电晕枪和半导体晶片的表面之间。 通过枪施加在晶片上的电荷由施加到屏幕的电位来控制。 卡盘将晶片定位在靠近屏幕的位置。 通过沉积交替极性电晕电荷将所需的电荷施加到晶片,直到晶片的电位等于屏幕的电位。

    High-speed high-efficiency solid-state electron detector
    7.
    发明授权
    High-speed high-efficiency solid-state electron detector 有权
    高速高效固态电子探测器

    公开(公告)号:US07714300B1

    公开(公告)日:2010-05-11

    申请号:US11711552

    申请日:2007-02-26

    IPC分类号: G01T1/00

    摘要: One embodiment relates to a solid-state charged-particle detector. The detector includes a PIN diode and a conductive coating on the front-side of the PIN diode, wherein the front-side receives incident charged particles to be detected. In addition, the detector includes a metal layer on the backside of the PIN diode and electrical connections to the metal layer and to the conductive coating. Other embodiment are also disclosed.

    摘要翻译: 一个实施方案涉及固态带电粒子检测器。 检测器包括PIN二极管和PIN二极管前侧的导电涂层,其中前侧接收待检测的入射带电粒子。 此外,检测器包括在PIN二极管背面的金属层和与金属层和导电涂层的电连接。 还公开了其他实施例。