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公开(公告)号：US06448804B2
公开(公告)日：2002-09-10
申请号：US09964944
申请日：2001-09-27
IPC分类号： G01R3126
CPC分类号： G01R29/24 , G01R31/2656 , G01R31/2831
摘要： A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer, and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.
摘要翻译： 测量半导体衬底上的绝缘层的总电荷的方法包括对绝缘层施加电晕电荷，以及在施加每个电晕电荷之后测量绝缘层的表面光电压。 用库仑计测量每个电晕电荷的电荷密度。 确定获得预定固定值的表面光电压所需的总电晕电荷，并用于计算绝缘层的总电荷。 固定值对应于平带或中频带条件。
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公开(公告)号：US06202029B1
公开(公告)日：2001-03-13
申请号：US09597503
申请日：2000-06-20
IPC分类号： G01R3126
CPC分类号： G01R31/2648
摘要： A corona source is used to apply charge to an insulating layer. The resulting voltage over time is used to determine the current through the layer. The resulting data determines a current-voltage characteristic for the layer and may be used to determine the tunneling field for the layer.
摘要翻译： 使用电晕源将电荷施加到绝缘层。 随着时间的推移产生的电压用于确定通过该层的电流。 所得数据确定该层的电流 - 电压特性，并可用于确定该层的隧道场。
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3.发明授权
公开(公告)号：US6097196A
公开(公告)日：2000-08-01
申请号：US841501
申请日：1997-04-23
CPC分类号： G01R31/2648
摘要： A corona source is used to repetitively apply charge to an oxide layer on a semiconductor. A Kelvin probe is used to measure the resulting voltage across the layer. The tunneling field is determined based on the value of voltage at which the voltage measurement saturates.
摘要翻译： 电晕源用于重复地向半导体上的氧化物层施加电荷。 开尔文探头用于测量层间产生的电压。 基于电压测量饱和的电压值来确定隧道场。
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4.发明授权Contactless method for measuring total charge of an insulating layer on a substrate using corona charge 失效用于使用电晕电荷测量衬底上的绝缘层的总电荷的非接触式方法公开(公告)号：US06191605B1
公开(公告)日：2001-02-20
申请号：US08912697
申请日：1997-08-18
IPC分类号： G01R3126
CPC分类号： G01R29/24 , G01R31/2656 , G01R31/2831
摘要： A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.
摘要翻译： 测量半导体衬底上的绝缘层的总电荷的方法包括在绝缘层上施加电晕电荷，并在施加每个电晕电荷之后测量绝缘层的表面光电压。 用库仑计测量每个电晕电荷的电荷密度。 确定获得预定固定值的表面光电压所需的总电晕电荷，并用于计算绝缘层的总电荷。 固定值对应于平带或中频带条件。
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公开(公告)号：US06335630B1
公开(公告)日：2002-01-01
申请号：US09749485
申请日：2000-12-26
IPC分类号： G01R3126
摘要： A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.
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6.发明授权Apparatus and method for depositing uniform charge on a thin oxide semiconductor wafer 失效在薄氧化物半导体晶片上沉积均匀电荷的装置和方法
公开(公告)号：US6060709A
公开(公告)日：2000-05-09
申请号：US1488
申请日：1997-12-31
CPC分类号： H01T19/00
摘要： A conductive slit screen is placed between a corona gun and the surface of a semiconductor wafer. The charge deposited on the wafer by the gun is controlled by a potential applied to the screen. A chuck orients the wafer in close proximity to the screen. A desired charge is applied to the wafer by depositing alternating polarity corona charge until the potential of the wafer equals the potential of the screen.
摘要翻译： 导电狭缝屏幕放置在电晕枪和半导体晶片的表面之间。 通过枪施加在晶片上的电荷由施加到屏幕的电位来控制。 卡盘将晶片定位在靠近屏幕的位置。 通过沉积交替极性电晕电荷将所需的电荷施加到晶片，直到晶片的电位等于屏幕的电位。
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公开(公告)号：US5594247A
公开(公告)日：1997-01-14
申请号：US499326
申请日：1995-07-07
摘要： A conductive screen is placed between a corona gun and the surface of a semiconductor wafer. The charge deposited on the wafer by the gun is controlled by a potential applied to the screen. A chuck orients the wafer in close proximity to the screen. A desired charge is applied to the wafer by first applying a surplus of one charge to the wafer and then depositing an opposite polarity charge until the potential of the wafer equals the potential of the screen.
摘要翻译： 将导电屏放置在电晕枪和半导体晶片的表面之间。 通过枪施加在晶片上的电荷由施加到屏幕的电位来控制。 卡盘将晶片定位在靠近屏幕的位置。 通过首先向晶片施加剩余的一次电荷，然后沉积相反极性的电荷，直到晶片的电位等于屏幕的电位，将期望的电荷施加到晶片。
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8.发明授权Non-contact mobile charge measurement with leakage band-bending and dipole correction 有权具有泄漏带弯曲和偶极校正的非接触式移动电荷测量公开(公告)号：US07230443B1
公开(公告)日：2007-06-12
申请号：US11210093
申请日：2005-08-23
IPC分类号： G01R31/02
CPC分类号： G01R31/2831 , G01R31/2648
摘要： Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.
摘要翻译： 电晕电荷用于偏置晶片以推下移动电荷，然后在温度循环期间将其拉起。 由于移动电荷，电晕电压的下降来测量移动电荷。 在偶极子电位，漏电和硅带弯曲测量中进行校正。
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9.发明授权Non-contact mobile charge measurement with leakage band-bending and dipole correction 失效具有泄漏带弯曲和偶极校正的非接触式移动电荷测量公开(公告)号：US06937050B1
公开(公告)日：2005-08-30
申请号：US10809092
申请日：2004-03-25
IPC分类号： G01R31/311 , G01R31/02
CPC分类号： G01R31/311
摘要： Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.
摘要翻译： 电晕电荷用于偏置晶片以推下移动电荷，然后在温度循环期间将其拉起。 由于移动电荷，电晕电压的下降来测量移动电荷。 在偶极子电位，漏电和硅带弯曲测量中进行校正。
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10.发明授权Non-contact mobile charge measurement with leakage band-bending and dipole correction 失效具有泄漏带弯曲和偶极校正的非接触式移动电荷测量公开(公告)号：US06522158B1
公开(公告)日：2003-02-18
申请号：US08847644
申请日：1997-04-30
IPC分类号： G01R3100
CPC分类号： G01R31/311
摘要： Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.
摘要翻译： 电晕电荷用于偏置晶片以推下移动电荷，然后在温度循环期间将其拉起。 由于移动电荷，电晕电压的下降来测量移动电荷。 在偶极子电位，漏电和硅带弯曲测量中进行校正。
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