Invention Grant
- Patent Title: Backgate switched power amplifier
- Patent Title (中): Backgate开关功率放大器
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Application No.: US159294Application Date: 1998-09-23
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Publication No.: US6064264APublication Date: 2000-05-16
- Inventor: Maurice J. Tarsia , Hongmo Wang
- Applicant: Maurice J. Tarsia , Hongmo Wang
- Applicant Address: NJ Murray Hill
- Assignee: Lucent Technologies Inc.
- Current Assignee: Lucent Technologies Inc.
- Current Assignee Address: NJ Murray Hill
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/72 ; H03F3/16 ; H03F3/68
Abstract:
A switched power amplifier circuit employs non-linear amplifier stages including MOSFET transistors. The transistors each have source, gate, drain and backgate terminals. An input Rf signal is applied to the gate terminals and the source (or drain) terminals are connected to a load. The transistors are operated as switches by selectively applying clock signals to the backgate terminals to activate desired transistors, thus causing the transistors to turn on and allow current to flow through the load to generate power. The power to the load is increased by turning on multiple transistors at any given time.
Public/Granted literature
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Information query
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