发明授权
- 专利标题： Hot plate cure process for BCB low k interlevel dielectric
- 专利标题（中）： BCB低k层间电介质的热板固化工艺
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申请号： US187429申请日： 1998-11-06
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公开(公告)号： US6066574A公开(公告)日： 2000-05-23
- 发明人: Lu You , Dawn Hopper , Christof Streck
- 申请人： Lu You , Dawn Hopper , Christof Streck
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/312 ; H01L21/768 ; H01L21/31
摘要：
A dielectric layer comprising a benzocyclobutene (BCB)-based low dielectric constant (low k) material is formed on a surface of a semiconductor wafer substrate by (a) spin coating a layer of a fluid material comprising BCB in a liquid solvent or dispersant vehicle on the substrate; (b) baking the coated substrate at a first temperature and for a first time interval to remove the solvent; (c) curing the baked coating by heating at a second temperature higher than the first temperature, and for a second time interval; and (d) subjecting the substrate with cured coating thereon to a cool-down treatment at a third temperature and for a third time interval. Embodiments include performing steps (a)-(d) consecutively and in the same apparatus. Other embodiments include processing in an "on track" type automated semiconductor processing apparatus.
公开/授权文献
- US4843703A Method of assembling a window operator 公开/授权日：1989-07-04
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