- 专利标题： Method and system for providing inorganic vapor surface treatment for photoresist adhesion promotion
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申请号： US980888申请日： 1997-12-01
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公开(公告)号： US6066578A公开(公告)日： 2000-05-23
- 发明人: Subhash Gupta , Bhanwar Singh , Carmen Morales
- 申请人： Subhash Gupta , Bhanwar Singh , Carmen Morales
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： G03F7/16
- IPC分类号： G03F7/16 ; H01L21/027 ; H01L21/311 ; H01L21/312 ; G03C5/00
摘要：
A system and method for forming a plurality of structures in a low dielectric constant layer is disclosed. The low dielectric constant layer is disposed on a semiconductor. The method and system include exposing the low dielectric constant layer to an agent that improves adhesion of a photoresist, providing a layer of the photoresist on the low dielectric constant layer, patterning the photoresist, and etching the low dielectric constant layer to form the plurality of structures.
公开/授权文献
- US5274091A ADMPT and its synthesis 公开/授权日：1993-12-28
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