发明授权
US6069389A Semiconductor non-volatile memory device having floating gate type field
effect transistors for memory cells bipolar transistors for a
high-speed circuit
失效
具有用于高速电路的存储单元双极晶体管的浮栅型场效应晶体管的半导体非易失性存储器件
- 专利标题： Semiconductor non-volatile memory device having floating gate type field effect transistors for memory cells bipolar transistors for a high-speed circuit
- 专利标题（中）： 具有用于高速电路的存储单元双极晶体管的浮栅型场效应晶体管的半导体非易失性存储器件
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申请号： US943253申请日： 1997-10-17
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公开(公告)号： US6069389A公开(公告)日： 2000-05-30
- 发明人: Masakazu Sasaki
- 申请人： Masakazu Sasaki
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-297620 19961018
- 主分类号： G11C17/00
- IPC分类号： G11C17/00 ; G11C16/02 ; H01L21/8247 ; H01L27/105 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L29/76
摘要：
A semiconductor flash memory device includes floating gate type field effect transistors serving as memory cells, field effect transistors for forming peripheral circuits and bipolar transistors for forming other peripheral circuits expected to drive heavy load at high speed, and both of the floating gate electrodes and the emitter electrodes and both of the control gate electrodes and the gate electrodes are patterned from a first doped polysilicon and a second doped polysilicon so as to simplify a process sequence for fabricating the semiconductor flash memory device.
公开/授权文献
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