- 专利标题： Light-emitting gallium nitride-based compound semiconductor device
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申请号： US145972申请日： 1998-09-03
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公开(公告)号： US6078063A公开(公告)日： 2000-06-20
- 发明人: Shuji Nakamura , Takashi Mukai , Naruhito Iwasa
- 申请人： Shuji Nakamura , Takashi Mukai , Naruhito Iwasa
- 申请人地址： JPX Tokushima-ken
- 专利权人： Nichia Chemical Industries Ltd.
- 当前专利权人： Nichia Chemical Industries Ltd.
- 当前专利权人地址： JPX Tokushima-ken
- 优先权： JPX4-335556 19921120; JPX5-18122 19930108; JPX5-18123 19930108; JPX5-70873 19930305; JPX5-70874 19930305; JPX5-114542 19930517; JPX5-114543 19930517; JPX5-114544 19930517
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L33/00 ; H01L33/02 ; H01L33/32 ; H01S5/323
摘要：
A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0
公开/授权文献
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