公开(公告)号：US5747832A

公开(公告)日：1998-05-05

申请号：US661138

申请日：1996-06-10

申请人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0

公开(公告)号：US5578839A

公开(公告)日：1996-11-26

申请号：US153153

申请日：1993-11-17

申请人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0

公开(公告)号：US5880486A

公开(公告)日：1999-03-09

申请号：US705972

申请日：1996-08-30

申请人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0

公开(公告)号：US06469323B1

公开(公告)日：2002-10-22

申请号：US09516193

申请日：2000-03-01

申请人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1−xN (0

摘要翻译： 一种双异质结构的发光氮化镓基化合物半导体器件。 双异质结构包括由掺杂有p型和/或n型杂质的低电阻率In x Ga 1-x N（0

公开(公告)号：US5734182A

公开(公告)日：1998-03-31

申请号：US661157

申请日：1996-06-10

申请人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure is disclosed. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0

摘要翻译： 公开了一种双异质结构的发光氮化镓基化合物半导体器件。 双异质结构包括由掺杂有p型和/或n型杂质的低电阻率In x Ga 1-x N（0

公开(公告)号：US6078063A

公开(公告)日：2000-06-20

申请号：US145972

申请日：1998-09-03

申请人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0

公开(公告)号：US06791103B2

公开(公告)日：2004-09-14

申请号：US10227834

申请日：2002-08-27

申请人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1−xN (0

摘要翻译： 一种双异质结构的发光氮化镓基化合物半导体器件。 双异质结构包括由掺杂有p型和/或n型杂质的低电阻率In x Ga 1-x N（0

公开(公告)号：US06215133B1

公开(公告)日：2001-04-10

申请号：US09300788

申请日：1999-04-28

申请人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1-xN (0

摘要翻译： 一种双异质结构的发光氮化镓基化合物半导体器件。 双异质结构包括由掺杂有p型和/或n型杂质的低电阻率In x Ga 1-x N（0

公开(公告)号：US07166869B2

公开(公告)日：2007-01-23

申请号：US10801038

申请日：2004-03-16

申请人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa

IPC分类号： H01L27/15 ,  H01L31/12

CPC分类号： H01S5/343 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2202 ,  H01S5/3201 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3404 ,  H01S5/3412 ,  H01S5/3413 ,  H01S5/34333

摘要： A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

公开(公告)号：US06940103B2

公开(公告)日：2005-09-06

申请号：US10600833

申请日：2003-06-23

申请人： Hiroyuki Kiyoku ,  Shuji Nakamura ,  Tokuya Kozaki ,  Naruhito Iwasa ,  Kazuyuki Chocho

发明人： Hiroyuki Kiyoku ,  Shuji Nakamura ,  Tokuya Kozaki ,  Naruhito Iwasa ,  Kazuyuki Chocho

IPC分类号： C23C16/04 ,  C23C16/30 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/16 ,  H01S5/02 ,  C30B23/04 ,  C30B25/04

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C23C16/042 ,  C23C16/303 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/16 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

摘要翻译： 公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。