发明授权
US6086777A Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma dry etch
失效
使用CF4 / o2等离子体干蚀刻去除钽阻隔金属
- 专利标题： Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma dry etch
- 专利标题（中）： 使用CF4 / o2等离子体干蚀刻去除钽阻隔金属
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申请号： US108783申请日： 1998-07-02
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公开(公告)号： US6086777A公开(公告)日： 2000-07-11
- 发明人: Jerry Cheng , Fei Wang
- 申请人： Jerry Cheng , Fei Wang
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： C23F4/00
- IPC分类号： C23F4/00 ; H01L21/3213 ; H01L21/768 ; C23F1/10
摘要：
In one embodiment, the present invention relates to a method of etching tantalum disposed over a dielectric layer, involving etching at least a portion of the tantalum using a tantalum etch gas mixture containing from about 300 sccm to about 400 sccm of CF.sub.4 and about 200 sccm to about 600 sccm of oxygen at a temperature from about 100.degree. C. to about 150.degree. C. under a pressure from about 1 torr to about 1.5 torr. In another embodiment, the present invention relates to a method of etching at least a portion of a tantalum barrier layer, the tantalum barrier layer at least partially surrounding a copper or copper alloy interconnect, involving etching at least a portion of the tantalum barrier layer using a tantalum etch gas mixture containing from about 300 sccm to about 400 sccm of CF.sub.4 and about 200 sccm to about 600 sccm of oxygen.
公开/授权文献
- USD426042S Trash cup 公开/授权日：2000-05-30
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