发明授权
- 专利标题： Method of forming polycrystalline silicon thin layer
- 专利标题（中）： 多晶硅薄层形成方法
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申请号： US255873申请日： 1999-02-23
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公开(公告)号： US6086945A公开(公告)日： 2000-07-11
- 发明人: Atsushi Kamata , Hiroki Inagaki , Seiichi Suenaga , Hiromitsu Takeda
- 申请人： Atsushi Kamata , Hiroki Inagaki , Seiichi Suenaga , Hiromitsu Takeda
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX10-062626 19980313
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C2/04 ; C23C2/28 ; C23C4/04 ; C23C4/18 ; C23C26/00 ; C23C26/02 ; C23C30/00 ; H01L21/20 ; H01L21/208 ; H01L31/04 ; H01L31/18 ; B05D1/02 ; B05D1/36 ; B05D3/02
摘要：
A method of forming a polycrystalline silicon thin layer, which comprises the steps of forming a silicon thin film on a surface of a heat resistant substrate by making use of polycrystalline silicon fine particles as a raw material, and heating the silicon thin film thereby to recrystallize the silicon thin film and hence to enlarge an average particle diameter of the polycrystalline silicon fine particles. The silicon thin film is formed by depositing the polycrystalline silicon fine particles directly on the surface of the substrate, and meets a relationship represented by the following formula (1)W.sub.A /(V.sub.S .multidot.d.sub.S).gtoreq.0.95 (1)wherein W.sub.A is the weight of the polycrystalline silicon fine particles which is actually deposited on the surface of the substrate, V.sub.S is a volume of the silicon thin film which is deposited on the surface of the substrate, and d.sub.S is a density of silicon (Si).
公开/授权文献
- US4890533A Key device for electronic keyboard musical instrument 公开/授权日：1990-01-02
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