发明授权
- 专利标题: Chemical vapor deposition apparatus
- 专利标题(中): 化学气相沉积装置
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申请号: US478362申请日: 2000-01-06
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公开(公告)号: US6096133A公开(公告)日: 2000-08-01
- 发明人: Akimasa Yuuki , Takaaki Kawahara , Tetsuro Makita , Mikio Yamamuka , Koichi Ono , Tomonori Okudaira
- 申请人: Akimasa Yuuki , Takaaki Kawahara , Tetsuro Makita , Mikio Yamamuka , Koichi Ono , Tomonori Okudaira
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPXP06-326971 19941228; JPXP06-326972 19941228
- 主分类号: C23C16/40
- IPC分类号: C23C16/40 ; C23C16/448 ; C23C16/52 ; C23C16/54 ; C23C16/00
摘要:
An apparatus for depositing a thin film on a substrate by chemical vapor deposition (CVD) includes a material container for containing a liquid CVD source material; a material feeder for feeding the liquid CVD source material from the material container to a vaporizer while keeping the CVD source material liquid; a vaporizer for vaporizing the liquid CVD source material fed from the material feeder by heating the liquid CVD source material to a high temperature to form a CVD source material gas; a reaction chamber connected to the vaporizer by a pipe for forming a thin film on a substrate using the CVD source material gas; and a thermostatic box surrounding the reaction chamber, wherein both of the vaporizer and piping connecting the vaporizer to the reaction chamber are located within the thermostatic box.
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