发明授权
- 专利标题: Dry etching system and dry etching method using plasma
- 专利标题(中): 干蚀刻系统和使用等离子体的干蚀刻方法
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申请号: US874722申请日: 1997-06-13
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公开(公告)号: US6096232A公开(公告)日: 2000-08-01
- 发明人: Toshiki Hashimoto
- 申请人: Toshiki Hashimoto
- 申请人地址: JPX Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-154685 19960614
- 主分类号: C23F4/00
- IPC分类号: C23F4/00 ; H01J37/32 ; H01L21/302 ; H01L21/3065 ; G01N21/00 ; H01L21/00
摘要:
A dry etching system capable of suppressing the effect of reaction products generated in a reaction chamber during an etching process to the edge profile of an etch object such as a semiconductor wafer. This system includes a reaction chamber in which an etching action is performed, a plasma generator for generating plasma in the reaction chamber, a holder for holding an etch object in the reaction chamber, a detector for detecting the quantity of a reaction product contained in the plasma, and a controller for controlling the amount of the reaction products contained in the plasma to be at least one specific value. The etch object is etched by the action of etching species contained in the plasma. The detector detects, for example, the intensity of light emission from the plasma at a specific wavelength. The controller preferably includes a distance adjuster for adjusting the distance between a dielectric plate and an induction coil, thereby controlling the amount of the reaction products contained in the plasma.