公开(公告)号：US6096232A

公开(公告)日：2000-08-01

申请号：US874722

申请日：1997-06-13

申请人： Toshiki Hashimoto

发明人： Toshiki Hashimoto

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  G01N21/00 ,  H01L21/00

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01J37/32972

摘要： A dry etching system capable of suppressing the effect of reaction products generated in a reaction chamber during an etching process to the edge profile of an etch object such as a semiconductor wafer. This system includes a reaction chamber in which an etching action is performed, a plasma generator for generating plasma in the reaction chamber, a holder for holding an etch object in the reaction chamber, a detector for detecting the quantity of a reaction product contained in the plasma, and a controller for controlling the amount of the reaction products contained in the plasma to be at least one specific value. The etch object is etched by the action of etching species contained in the plasma. The detector detects, for example, the intensity of light emission from the plasma at a specific wavelength. The controller preferably includes a distance adjuster for adjusting the distance between a dielectric plate and an induction coil, thereby controlling the amount of the reaction products contained in the plasma.

摘要翻译： 一种干蚀刻系统，其能够抑制在蚀刻工艺期间在反应室中产生的反应产物对诸如半导体晶片的蚀刻对象的边缘轮廓的影响。 该系统包括其中执行蚀刻作用的反应室，用于在反应室中产生等离子体的等离子体发生器，用于在反应室中保持蚀刻对象的保持器，用于检测包含在反应室中的反应产物的量的检测器 等离子体和用于将包含在等离子体中的反应产物的量控制在至少一个特定值的控制器。 蚀刻对象通过蚀刻包含在等离子体中的物质的作用来蚀刻。 检测器检测例如来自等离子体在特定波长处的发光强度。 控制器优选地包括用于调节电介质板和感应线圈之间的距离的距离调节器，从而控制包含在等离子体中的反应产物的量。

公开(公告)号：US5366920A

公开(公告)日：1994-11-22

申请号：US229423

申请日：1994-04-12

申请人： Shintaro Yamamichi ,  Hirohito Watanabe ,  Toshiki Hashimoto ,  Toshiyuki Sakuma

发明人： Shintaro Yamamichi ,  Hirohito Watanabe ,  Toshiki Hashimoto ,  Toshiyuki Sakuma

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L28/40 ,  H01L28/55

摘要： A thin film capacitor which comprises a lower electrode, a dielectric film and an upper electrode is fabricated on a substrate. The lower electrode is not provided by etching process using a photoresist mask, but it is provided by providing an aperture thorough an insulating layer deposited on the substrate, and depositing a conductive film on the bottom of the aperture and connected to a lower interconnection provided on the bottom of the aperture. Consequently, no convex protrusion is found at the processed edge of the lower electrode.

摘要翻译： 在基板上制造包括下电极，电介质膜和上电极的薄膜电容器。 下部电极不是通过使用光致抗蚀剂掩模的蚀刻工艺提供的，而是通过提供沉积在基板上的绝缘层的孔，并且在孔的底部上沉积导电膜并连接到设置在其上的下部互连 孔的底部。 因此，在下电极的处理边缘处没有发现凸起。