发明授权
US6097037A Thin film transistor having a continuous crystallized layer including
the channel and portions of source and drain regions
失效
具有连续结晶层的薄膜晶体管，其包括沟道以及源极和漏极区的部分
- 专利标题： Thin film transistor having a continuous crystallized layer including the channel and portions of source and drain regions
- 专利标题（中）： 具有连续结晶层的薄膜晶体管，其包括沟道以及源极和漏极区的部分
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申请号： US74606申请日： 1998-05-08
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公开(公告)号： US6097037A公开(公告)日： 2000-08-01
- 发明人: Seung-ki Joo , Tae-Hyung Ihn
- 申请人： Seung-ki Joo , Tae-Hyung Ihn
- 专利权人： LG Display Co Ltd
- 当前专利权人： LG Display Co Ltd
- 优先权： KRX97-59378 19971112
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/336 ; H01L31/036
摘要：
A transistor includes an MILC (metal-induced lateral crystallization) region formed on a substrate with a semiconductor material and including a channel region, and a plurality of MIC (metal-induced crystallization) regions formed on the sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region. A method of fabricating a transistor includes the steps of forming an MILC (metal-induced lateral crystallization) region on a substrate using a semiconductor material, the MILC region including a channel region, and forming a plurality of MIC (metal-induced crystallization) regions formed on sides of the MILC region using a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region.
公开/授权文献
- USD400712S Carrier 公开/授权日：1998-11-10