公开(公告)号：US08716112B2

公开(公告)日：2014-05-06

申请号：US13630148

申请日：2012-10-16

申请人： Seung Ki Joo ,  Chang Woo Byun ,  Se Wan Son ,  Yong Woo Lee ,  Hyun Mo Kang ,  Seol Ah Park ,  Woo Chang Lim ,  Tao Li ,  Seung Jae Yun ,  Sang Joo Lee

发明人： Seung Ki Joo ,  Chang Woo Byun ,  Se Wan Son ,  Yong Woo Lee ,  Hyun Mo Kang ,  Seol Ah Park ,  Woo Chang Lim ,  Tao Li ,  Seung Jae Yun ,  Sang Joo Lee

IPC分类号： H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/66757

摘要： Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds.

摘要翻译： 提供了一种使非晶硅薄膜晶体管结晶的方法和使用其制造多晶薄膜晶体管的方法，其中指示可用于有源矩阵有机发光二极管的电平的漏电流特性的多晶薄膜晶体管 可以通过使用硅化物种子诱导横向结晶（SILC）方法来制造显示器（AMOLED）。 非晶硅薄膜晶体管结晶方法包括以下步骤：在基板上形成非晶硅层; 通过图案化所述非晶硅层形成有源区; 在放置在有源区的两侧端的源区和漏区中形成结晶诱导金属层; 通过除去结晶诱导的金属层，在源极区和由非晶硅制成的漏极区域的表面上形成多个点状金属硅化物晶种; 并且通过使用金属硅化物种子作为结晶种子对基底进行热处理，使由非晶硅层形成的活性区域结晶。

公开(公告)号：US20090183772A1

公开(公告)日：2009-07-23

申请号：US12355078

申请日：2009-01-16

申请人： SEUNG KI JOO ,  HYEONG SUK YOO ,  YOUNG SU KIM

发明人： SEUNG KI JOO ,  HYEONG SUK YOO ,  YOUNG SU KIM

IPC分类号： H01L31/00 ,  H01L31/0232 ,  H01L31/0368

CPC分类号： H01L31/1872 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： Disclosed herein is a method of forming a light-absorbing layer of a polycrystalline silicon solar cell, including: forming a polycrystalline silicon layer on a back electrode; forming an intrinsic amorphous silicon layer on the polycrystalline silicon layer; and heat-treating the transparent insulating substrate to vertically crystallize the intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process to form the intrinsic amorphous silicon layer into a light-absorbing layer made of polycrystalline silicon, and is a method of fabricating a high-efficiency polycrystalline silicon solar cell using the light-absorbing layer.

摘要翻译： 本文公开了形成多晶硅太阳能电池的光吸收层的方法，包括：在背面电极上形成多晶硅层; 在所述多晶硅层上形成本征非晶硅层; 并且通过金属诱导垂直结晶（MIVC）工艺，使用多晶硅层作为结晶晶种，对透明绝缘基板进行热处理，以使本征非晶硅层垂直结晶，从而将本征非晶硅层形成为制成的光吸收层 的多晶硅，并且是使用该光吸收层制造高效多晶硅太阳能电池的方法。

公开(公告)号：US20070228930A1

公开(公告)日：2007-10-04

申请号：US11713203

申请日：2007-03-02

申请人： Hyeong-Suk Yoo ,  Seung-Ki Joo

发明人： Hyeong-Suk Yoo ,  Seung-Ki Joo

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01J63/06 ,  G02F1/133602 ,  G02F2001/133625 ,  H01J61/305 ,  H01J63/02 ,  H01J63/04

摘要： A field emission backlight for a display device includes upper and lower substrates. The upper substrate includes an upper transparent substrate, a transparent electrode, and a fluorescent part. The lower substrate includes a lower transparent substrate having a receiving groove, a first electrode part, a second electrode part, and an electron-emitting part. The first electrode part is formed on an upper surface of the lower transparent substrate and the second electrode part is formed on a bottom surface of the receiving groove, so that the gap between the first and second electrode parts can be reduced below that conventionally required. This, in turn, enables the level of a voltage applied between the first and the second electrode parts to be reduced, and a corresponding reduction in the manufacturing cost of a field emission backlight to be achieved.

摘要翻译： 用于显示装置的场发射背光包括上基板和下基板。 上基板包括上透明基板，透明电极和荧光部件。 下基板包括具有接收槽的下透明基板，第一电极部分，第二电极部分和电子发射部分。 第一电极部分形成在下透明基板的上表面上，并且第二电极部分形成在接收槽的底表面上，使得第一和第二电极部分之间的间隙可以降低到低于传统所需的位置。 这又能够降低在第一和第二电极部分之间施加的电压的电平，并且实现场致发射背光的制造成本的相应降低。

公开(公告)号：US20040110329A1

公开(公告)日：2004-06-10

申请号：US10718141

申请日：2003-11-20

申请人： Seung Ki Joo

发明人： Seung Ki Joo ,  Seok-Woon Lee

IPC分类号： H01L021/00 ,  H01L021/84

CPC分类号： H01L21/67167 ,  H01L21/67207 ,  H01L21/67213 ,  H01L21/67225 ,  H01L29/4908 ,  H01L29/66757

摘要： The present invention relates to a method and apparatus for fabricating a thin film transistor including a crystalline silicon active layer. According to the method of the present invention, there are advantages in that processing time and production costs can be reduced since a series of processes of fabricating the thin film transistor, such as deposition of source metal, thermal annealing for crystallization, and deposition of an insulating layer or a wiring metal layer, can be consecutively performed in one apparatus.

摘要翻译： 本发明涉及一种用于制造包括晶体硅有源层的薄膜晶体管的方法和装置。 根据本发明的方法，具有可以减少处理时间和生产成本的优点，因为制造薄膜晶体管的一系列工艺，例如源极金属的沉积，用于结晶的热退火和沉积 绝缘层或布线金属层，可以在一个装置中连续执行。

公开(公告)号：US06635571B2

公开(公告)日：2003-10-21

申请号：US09841072

申请日：2001-04-25

申请人： Seung Ki Joo ,  Jang Sik Lee ,  Chang Wook Jeong

发明人： Seung Ki Joo ,  Jang Sik Lee ,  Chang Wook Jeong

IPC分类号： H01L2144

CPC分类号： H01L21/02178 ,  C23C16/403 ,  C23C16/45531 ,  C23C16/4554 ,  H01L21/02274 ,  H01L21/28562 ,  H01L21/31683 ,  H01L21/76888

摘要： Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum source in contact with a target substrate and depositing aluminum using plasma. The steps are sequentially repeated to form an aluminum thin film, and further includes the step of oxidizing the aluminum thin film using oxygen plasma. This deposition cycle is repeated to obtain an aluminum oxide thin film. The present invention uses an aluminum source containing less contaminant compared to the prior art, thus obtaining aluminum oxide of high quality. Furthermore, the temperature of the gas supply and the reactor can be lowered in relation to the prior art method to reduce costs in the fabrication of semiconductor devices.

摘要翻译： 公开了用于沉积半导体器件所需的氧化铝薄膜的工艺。 该方法包括以下步骤：使作为铝源的气态有机铝化合物与靶基质接触并使用等离子体沉积铝。 依次重复步骤以形成铝薄膜，并且还包括使用氧等离子体氧化铝薄膜的步骤。 重复该沉积循环以获得氧化铝薄膜。 与现有技术相比，本发明使用含有较少污染物的铝源，从而获得高质量的氧化铝。 此外，可以相对于现有技术的方法降低气体供应和反应器的温度，以降低制造半导体器件的成本。

公开(公告)号：US06340600B1

公开(公告)日：2002-01-22

申请号：US09837268

申请日：2001-04-19

申请人： Seung Ki Joo ,  Jang Sik Lee

发明人： Seung Ki Joo ,  Jang Sik Lee

IPC分类号： H01L2100

CPC分类号： H01L21/02197 ,  H01L21/02266 ,  H01L21/31691 ,  H01L28/55 ,  Y10S438/933

摘要： A method for fabricating a large single-grained ferroelectric thin film grown by selectively nucleated lateral crystallization (SNLC) using an artificial nucleation seed, a method for fabricating a ferroelectric capacitor using the same, and a method for fabricating a ferroelectric memory device using the same. The ferroelectric thin film fabrication method includes the steps of forming a first conductive layer on one side of a semiconductor substrate, by using a conductive material, forming an artificial nucleation seed in an island form adjacent a position where a ferroelectric thin film is to be formed in the upper portion of the first conductive layer, forming a ferroelectric thin film on the whole surface of the substrate including the nucleation seed, and thermally annealing the ferroelectric thin film to thereby grow the ferroelectric thin film positioned in the lateral side of the nucleation seed into a single-grained ferroelectric thin film.

摘要翻译： 一种通过使用人造成核晶种选择性晶核横向结晶（SNLC）生长的大型单晶铁电薄膜的制造方法，使用其制造铁电电容器的方法，以及使用其制造使用其的铁电存储器件的方法 。 铁电薄膜制造方法包括以下步骤：通过使用导电材料在半导体衬底的一侧上形成第一导电层，形成邻近形成铁电薄膜的位置的岛状的人造成核晶种 在第一导电层的上部，在包括成核种子的基板的整个表面上形成铁电薄膜，并且对铁电薄膜进行热退火，从而生长位于成核晶种侧面的铁电薄膜 成为单晶铁电薄膜。

公开(公告)号：US06221702B1

公开(公告)日：2001-04-24

申请号：US09143305

申请日：1998-08-28

申请人： Seung-Ki Joo ,  Tae-Kyung Kim

发明人： Seung-Ki Joo ,  Tae-Kyung Kim

IPC分类号： H01L2100

CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78675

摘要： The present invention relates to a method of fabricating a thin film transistor in which a metal silicide line generated from Metal Induced Lateral Crystallization is located at the outside of a channel region. The present invention includes the steps of forming a semiconductor layer on a substrate wherein the semiconductor layer has a first region, a channel region and a second region in order, forming a gate insulating layer/a gate electrode on the channel region, doping the first and the second region heavily with impurity, forming a metal film pattern making the first region a metal-offset, and crystallizing the semiconductor layer by means of applying thermal treatment to the semiconductor layer having the metal film.

公开(公告)号：US08389994B2

公开(公告)日：2013-03-05

申请号：US13182625

申请日：2011-07-14

申请人： Seung Ki Joo

发明人： Seung Ki Joo

IPC分类号： H01L29/10 ,  H01L31/036 ,  H01L21/00

CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678

摘要： Provided is a polysilicon thin film transistor having a trench type bottom gate structure using copper and a method of making the same. The polysilicon thin film transistor includes: a transparent insulation substrate; a seed pattern that is formed in a pattern corresponding to that of a gate electrode on the transparent insulation substrate, and that is used to form the gate electrode; a trench type guide portion having a trench type contact window in which an upper portion of the seed pattern is exposed; the gate electrode that is formed by electrodepositing copper on a trench of the exposed seed pattern; a gate insulation film formed on the upper portions of the gate electrode and the trench type guide portion, respectively; and a polysilicon layer in which a channel region, a source region and a drain region are formed on the upper portion of the gate insulation film.

摘要翻译： 提供一种具有使用铜的沟槽型底栅结构的多晶硅薄膜晶体管及其制造方法。 多晶硅薄膜晶体管包括：透明绝缘基板; 种子图案，其形成为与透明绝缘基板上的栅电极相对应的图案，并且用于形成栅电极; 具有沟槽型接触窗口的沟槽型引导部分，其中种子图案的上部被暴露; 通过在暴露的种子图案的沟槽上电沉积铜形成的栅电极; 分别形成在栅极电极和沟槽型引导部分的上部的栅极绝缘膜; 以及在栅极绝缘膜的上部形成有沟道区域，源极区域和漏极区域的多晶硅层。

公开(公告)号：US08211739B2

公开(公告)日：2012-07-03

申请号：US12355098

申请日：2009-01-16

申请人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim ,  Nam Kyu Song

发明人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim ,  Nam Kyu Song

IPC分类号： H01L21/00

CPC分类号： H01L31/03682 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/035281 ,  Y02E10/546

摘要： Disclosed herein is a polycrystalline silicon solar cell, including: a back electrode formed on a transparent insulating substrate; an N-type polycrystalline silicon layer in which amorphous silicon is crystallized through MIC process, and in which electrons are accumulated; a light-absorbing layer which is formed by vertically crystallizing an intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through MIVC process, in which pairs of electrons and holes are generated in response to incident light, and which has a vertical column grain structure in which grains are arranged in the direction in which electrons and holes move; a P-type polycrystalline silicon layer which has the vertical column grain structure, and in which holes are accumulated; a transparent electrode layer; front electrodes; and an antireflection coating film, and is a method of fabricating the same.

摘要翻译： 这里公开了一种多晶硅太阳能电池，包括：形成在透明绝缘基板上的背面电极; 其中非晶硅通过MIC工艺结晶并且其中电子被积聚的N型多晶硅层; 通过使用多晶硅层作为用于通过MIVC工艺结晶的晶种使本征非晶硅层垂直结晶而形成的光吸收层，其中响应于入射光而产生电子和空穴对，并且具有垂直 晶粒结构，其中晶粒沿电子和空穴移动的方向排列; 具有垂直柱状结构的P型多晶硅层，其中积聚有空穴; 透明电极层; 前电极 和抗反射涂膜，并且是其制造方法。

公开(公告)号：US20120161144A1

公开(公告)日：2012-06-28

申请号：US13182625

申请日：2011-07-14

申请人： Seung Ki JOO

发明人： Seung Ki JOO

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678

摘要： Provided is a polysilicon thin film transistor having a trench type bottom gate structure using copper and a method of making the same. The polysilicon thin film transistor includes: a transparent insulation substrate; a seed pattern that is formed in a pattern corresponding to that of a gate electrode on the transparent insulation substrate, and that is used to form the gate electrode; a trench type guide portion having a trench type contact window in which an upper portion of the seed pattern is exposed; the gate electrode that is formed by electrodepositing copper on a trench of the exposed seed pattern; a gate insulation film formed on the upper portions of the gate electrode and the trench type guide portion, respectively; and a polysilicon layer in which a channel region, a source region and a drain region are formed on the upper portion of the gate insulation film.

摘要翻译： 提供一种具有使用铜的沟槽型底栅结构的多晶硅薄膜晶体管及其制造方法。 多晶硅薄膜晶体管包括：透明绝缘基板; 种子图案，其形成为与透明绝缘基板上的栅电极相对应的图案，并且用于形成栅电极; 具有沟槽型接触窗口的沟槽型引导部分，其中种子图案的上部被暴露; 通过在暴露的种子图案的沟槽上电沉积铜形成的栅电极; 分别形成在栅极电极和沟槽型引导部分的上部的栅极绝缘膜; 以及在栅极绝缘膜的上部形成有沟道区域，源极区域和漏极区域的多晶硅层。