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    Semiconductor device and manufacturing method thereof
    2.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08383465B2

    公开(公告)日：2013-02-26

    申请号：US13183711

    申请日：2011-07-15

    申请人： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Hyung Ihn

    发明人： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Hyung Ihn

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869

    摘要： An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

    摘要翻译： 在衬底上形成氧化物或氮化物半导体层。 包括第一元件和第二元件的第一导电层和包括第二元件的第二导电层形成在半导体层上。 第一元件通过热处理或激光照射在第一导电层和氧化物或氮化物半导体层之间的界面区域附近被氧化或氮化。 第一元素的氧化物形成的吉布斯自由能低于第二元素或氧化物或氮化物半导体层中的任何元素的自由能。

    Semiconductor device and manufacturing method thereof
    3.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08067276B2

    公开(公告)日：2011-11-29

    申请号：US12333831

    申请日：2008-12-12

    申请人： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Hyung Ihn

    发明人： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Hyung Ihn

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869

    摘要： An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

    摘要翻译： 在衬底上形成氧化物或氮化物半导体层。 包括第一元件和第二元件的第一导电层和包括第二元件的第二导电层形成在半导体层上。 第一元件通过热处理或激光照射在第一导电层和氧化物或氮化物半导体层之间的界面区域附近被氧化或氮化。 第一元素的氧化物形成的吉布斯自由能低于第二元素或氧化物或氮化物半导体层中的任何元素的自由能。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20110266538A1

    公开(公告)日：2011-11-03

    申请号：US13183711

    申请日：2011-07-15

    申请人： Je-Hun LEE ,  Do-Hyun KIM ,  Tae-Hyung IHN

    发明人： Je-Hun LEE ,  Do-Hyun KIM ,  Tae-Hyung IHN

    IPC分类号： H01L29/12 ,  H01L21/336 ,  H01L21/02 ,  H01L27/12

    CPC分类号： H01L29/7869

    摘要： An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

    摘要翻译： 在衬底上形成氧化物或氮化物半导体层。 包括第一元件和第二元件的第一导电层和包括第二元件的第二导电层形成在半导体层上。 第一元件通过热处理或激光照射在第一导电层和氧化物或氮化物半导体层之间的界面区域附近被氧化或氮化。 第一元件的氧化物形成的吉布斯自由能低于第二元素或氧化物或氮化物半导体层中的任何元素的自由能。

    Liquid crystal display and fabricating method thereof
    6.
    发明授权
    Liquid crystal display and fabricating method thereof 失效
    液晶显示及其制造方法

    公开(公告)号：US06278130B1

    公开(公告)日：2001-08-21

    申请号：US09453172

    申请日：1999-12-02

    申请人： Seung-Ki Joo ,  Tae-Hyung Ihn

    发明人： Seung-Ki Joo ,  Tae-Hyung Ihn

    IPC分类号： H01L2904

    CPC分类号： G02F1/1368 ,  H01L29/78609 ,  H01L29/78621

    摘要： An LCD includes a substrate; a first transistor formed on the substrate, the first transistor having a MILC (metal-induced lateral crystallization) region formed on a substrate with a semiconductor material and including a channel region; and MIC (metal-induced crystallization) regions formed on sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region; a second transistor formed on the substrate, the second transistor having a MILC (metal-induced lateral crystallization) region formed on the same substrate with a semiconductor material and including a channel region; and MIC (metal-induced crystallization) regions formed on sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region; and a third transistor formed on the substrate, the third transistor having an amorphous silicon layer in an active layer.

    摘要翻译： LCD包括基板; 形成在所述衬底上的第一晶体管，所述第一晶体管具有形成在具有半导体材料并且包括沟道区的衬底上的MILC（金属诱导侧向结晶）区域; 和MI（金属诱导结晶）区域形成在具有半导体材料的MILC区域的侧面上，其中MILC区域和一个MIC区域之间的至少一个边界位于沟道区域的外部; 形成在所述基板上的第二晶体管，所述第二晶体管具有与半导体材料形成在同一基板上并且包括沟道区的MILC（金属诱导侧向结晶）区域; 和MI（金属诱导结晶）区域形成在具有半导体材料的MILC区域的侧面上，其中MILC区域和一个MIC区域之间的至少一个边界位于沟道区域的外部; 以及形成在所述衬底上的第三晶体管，所述第三晶体管在有源层中具有非晶硅层。

    Thin film transistor having a continuous crystallized layer including the channel and portions of source and drain regions
    7.
    发明授权
    Thin film transistor having a continuous crystallized layer including the channel and portions of source and drain regions 失效
    具有连续结晶层的薄膜晶体管，其包括沟道以及源极和漏极区的部分

    公开(公告)号：US6097037A

    公开(公告)日：2000-08-01

    申请号：US74606

    申请日：1998-05-08

    申请人： Seung-ki Joo ,  Tae-Hyung Ihn

    发明人： Seung-ki Joo ,  Tae-Hyung Ihn

    IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L31/036

    CPC分类号： H01L29/66757 ,  H01L21/2022

    摘要： A transistor includes an MILC (metal-induced lateral crystallization) region formed on a substrate with a semiconductor material and including a channel region, and a plurality of MIC (metal-induced crystallization) regions formed on the sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region. A method of fabricating a transistor includes the steps of forming an MILC (metal-induced lateral crystallization) region on a substrate using a semiconductor material, the MILC region including a channel region, and forming a plurality of MIC (metal-induced crystallization) regions formed on sides of the MILC region using a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region.

    摘要翻译： 晶体管包括在具有半导体材料并且包括沟道区的衬底上形成的MILC（金属诱导侧向结晶）区域和形成在具有半导体的MILC区域的侧面上的多个MIC（金属诱导结晶）区域 材料，其中所述MILC区域和所述MIC区域中的一个之间的至少一个边界位于所述沟道区域的外部。 制造晶体管的方法包括以下步骤：使用半导体材料在衬底上形成MILC（金属诱导侧向结晶）区域，MILC区域包括沟道区域，并形成多个MIC（金属诱导结晶）区域 使用半导体材料形成在MILC区域的侧面上，其中MILC区域和MIC区域中的一个之间的至少一个边界位于沟道区域的外部。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20100123136A1

    公开(公告)日：2010-05-20

    申请号：US12333831

    申请日：2008-12-12

    申请人： Je-Hun LEE ,  Do-Hyun Kim ,  Tae-Hyung Ihn

    发明人： Je-Hun LEE ,  Do-Hyun Kim ,  Tae-Hyung Ihn

    IPC分类号： H01L23/48 ,  H01L21/3205 ,  H01L33/00

    CPC分类号： H01L29/7869

    摘要： An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

    摘要翻译： 在衬底上形成氧化物或氮化物半导体层。 包括第一元件和第二元件的第一导电层和包括第二元件的第二导电层形成在半导体层上。 第一元件通过热处理或激光照射在第一导电层和氧化物或氮化物半导体层之间的界面区域附近被氧化或氮化。 第一元素的氧化物形成的吉布斯自由能低于第二元素或氧化物或氮化物半导体层中的任何元素的自由能。