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发明授权
US6100158A Method of manufacturing an alignment mark with an etched back dielectric layer and a transparent dielectric layer and a device region on a higher plane with a wiring layer and an isolation region 有权
制造具有蚀刻背面介电层和透明电介质层的对准标记的方法和具有布线层和隔离区域的较高平面上的器件区域

Method of manufacturing an alignment mark with an etched back dielectric layer and a transparent dielectric layer and a device region on a higher plane with a wiring layer and an isolation region
摘要：
A method of manufacturing an alignment mark. A substrate having a device region and an alignment mark region is provided. The device region is higher than the alignment mark region. The device region comprises an active region. An isolation structure is formed in the substrate at the edge of the alignment mark region and a first dielectric layer is formed over a portion of the substrate at the alignment mark region, simultaneously. A conductive layer is formed over the substrate. A portion of the conductive layer is removed to expose the first dielectric layer at the alignment mark region. The remaining conductive layer is patterned to form a component at the active region. A second dielectric layer with a smooth surface is formed over the substrate to cover the component. A wire is formed on the second dielectric layer, wherein a distance between the wire and the alignment mark region is larger than a distance between the component and the alignment mark region.
摘要（中）：

制造对准标记的方法。 提供具有器件区域和对准标记区域的衬底。 器件区域高于对准标记区域。 器件区域包括有源区。 在对准标记区域的边缘处的基板中形成隔离结构，同时在对准标记区域的一部分基板上形成第一电介质层。 导电层形成在衬底上。 去除导电层的一部分以在对准标记区域露出第一介电层。 将剩余的导电层图案化以在有源区域形成部件。 在衬底上形成具有光滑表面的第二电介质层以覆盖该部件。 在第二电介质层上形成导线，其中导线与对准标记区域之间的距离大于部件与对准标记区域之间的距离。

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