发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US936532申请日： 1997-09-24
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公开(公告)号： US6100193A公开(公告)日： 2000-08-08
- 发明人: Shintaro Suehiro , Yasushi Akasaka , Kyoichi Suguro , Kazuaki Nakajima , Tadashi Iijima
- 申请人： Shintaro Suehiro , Yasushi Akasaka , Kyoichi Suguro , Kazuaki Nakajima , Tadashi Iijima
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/768 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L21/44
摘要：
A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.
公开/授权文献
- US4837453A Security device 公开/授权日：1989-06-06
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