公开(公告)号：US6100193A

公开(公告)日：2000-08-08

申请号：US936532

申请日：1997-09-24

申请人： Shintaro Suehiro ,  Yasushi Akasaka ,  Kyoichi Suguro ,  Kazuaki Nakajima ,  Tadashi Iijima

发明人： Shintaro Suehiro ,  Yasushi Akasaka ,  Kyoichi Suguro ,  Kazuaki Nakajima ,  Tadashi Iijima

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L21/44

CPC分类号： H01L21/28061 ,  H01L21/28247 ,  H01L21/768 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4941 ,  H01L29/66575 ,  H01L29/6659 ,  H01L2924/0002

摘要： A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.

摘要翻译： 栅电极由多晶硅膜形成的MOSFET，具有透镜的氮表面密度的氮化硅膜比8×10 14 cm -2，以及这些膜以这样的顺序依次形成的钨膜。 这样形成的栅电极用于缩短MOSFET的延迟时间。

公开(公告)号：US5719410A

公开(公告)日：1998-02-17

申请号：US767149

申请日：1996-12-16

申请人： Shintaro Suehiro ,  Yasushi Akasaka ,  Kyoichi Suguro ,  Kazuaki Nakajima ,  Tadashi Iijima

发明人： Shintaro Suehiro ,  Yasushi Akasaka ,  Kyoichi Suguro ,  Kazuaki Nakajima ,  Tadashi Iijima

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L23/48

CPC分类号： H01L21/28061 ,  H01L21/28247 ,  H01L21/768 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4941 ,  H01L29/66575 ,  H01L29/6659 ,  H01L2924/0002

摘要： A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.

摘要翻译： 栅电极由多晶硅膜形成的MOSFET，具有透镜的氮表面密度的氮化硅膜比8×10 14 cm -2，以及这些膜以这样的顺序依次形成的钨膜。 这样形成的栅电极用于缩短MOSFET的延迟时间。

公开(公告)号：US5903053A

公开(公告)日：1999-05-11

申请号：US677397

申请日：1996-07-09

申请人： Tadashi Iijima ,  Hisako Ono ,  Kyoichi Suguro ,  Yasushi Akasaka ,  Shinichi Nakamura

发明人： Tadashi Iijima ,  Hisako Ono ,  Kyoichi Suguro ,  Yasushi Akasaka ,  Shinichi Nakamura

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L29/4975 ,  H01L29/45 ,  H01L29/4933 ,  H01L29/4941 ,  H01L29/495 ,  H01L29/7833 ,  H01L2924/0002

摘要： A semiconductor device comprising a conductive layer and an amorphous alloy layer formed on the bottom surface of said conductive layer and acting as a barrier layer. The conductive layer is either an electrode layer or a wiring layer. The amorphous alloy layer is made of a matrix phase and microcrystal grains. The matrix phase consists mainly of a Ti--Si--N amorphous alloy. The microcrystal grains are dispersed in the matrix phase, not continuously arranged in the direction of thickness of the amorphous alloy layer.

摘要翻译： 一种半导体器件，包括形成在所述导电层的底表面上并用作阻挡层的导电层和非晶态合金层。 导电层是电极层或布线层。 非晶合金层由基体相和微晶粒构成。 基体相主要由Ti-Si-N非晶合金组成。 微晶粒分散在基体相中，不是沿非晶合金层的厚度方向连续排列。

公开(公告)号：US06893980B1

公开(公告)日：2005-05-17

申请号：US09708043

申请日：2000-11-08

申请人： Yasushi Akasaka ,  Kazuaki Nakajima ,  Kiyotaka Miyano ,  Kyoichi Suguro

发明人： Yasushi Akasaka ,  Kazuaki Nakajima ,  Kiyotaka Miyano ,  Kyoichi Suguro

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L29/49 ,  H01L21/8232

CPC分类号： H01L21/76897 ,  H01L21/28061 ,  H01L21/32051 ,  H01L21/76885 ,  H01L29/4941 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.

摘要翻译： 根据本发明的半导体器件的制造方法，通过将金属膜暴露于氧化气体，在形成于半导体基板的主面上的金属膜上形成氧化膜。 然后在还原气氛中还原氧化膜，并且在还原步骤中还原的金属膜的表面上形成保护膜。 以这种方式，可以防止对金属膜的表面的损坏。

公开(公告)号：US5907188A

公开(公告)日：1999-05-25

申请号：US701716

申请日：1996-08-22

申请人： Kazuaki Nakajima ,  Yasushi Akasaka ,  Kiyotaka Miyano ,  Kyoichi Suguro

发明人： Kazuaki Nakajima ,  Yasushi Akasaka ,  Kiyotaka Miyano ,  Kyoichi Suguro

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/45 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/76

CPC分类号： H01L21/28247 ,  H01L21/76838 ,  H01L21/823835 ,  H01L29/456 ,  H01L2924/0002

摘要： A semiconductor device includes a semiconductor substrate, and a laminated film insulatively formed over the semiconductor substrate, wherein the laminated film includes a semiconductor film, a metal film of refractory metal formed on the semiconductor film, a conductive oxidation preventing film disposed between the metal film and the semiconductor film, for preventing oxidation of the semiconductor film in an interface between the metal film and the semiconductor film, and an oxide film formed on a side surface of the semiconductor film and formed to extend into upper and lower portions of the semiconductor film in a bird's beak form.

摘要翻译： 半导体器件包括半导体衬底和绝缘地形成在半导体衬底上的叠层膜，其中层压膜包括半导体膜，在半导体膜上形成的难熔金属的金属膜，设置在金属膜之间的导电氧化防止膜 以及半导体膜，用于防止半导体膜在金属膜和半导体膜之间的界面中的氧化，以及形成在半导体膜的侧表面上并形成为延伸到半导体膜的上部和下部的氧化膜 在鸟的嘴形式。

公开(公告)号：US20050130418A1

公开(公告)日：2005-06-16

申请号：US11047975

申请日：2005-02-02

申请人： Yasushi Akasaka ,  Kazuaki Nakajima ,  Kiyotaka Miyano ,  Kyoichi Suguro

发明人： Yasushi Akasaka ,  Kazuaki Nakajima ,  Kiyotaka Miyano ,  Kyoichi Suguro

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L29/49 ,  H01L21/20 ,  H01L21/44 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76897 ,  H01L21/28061 ,  H01L21/32051 ,  H01L21/76885 ,  H01L29/4941 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.

公开(公告)号：US6133150A

公开(公告)日：2000-10-17

申请号：US267376

申请日：1999-03-15

申请人： Kazuaki Nakajima ,  Yasushi Akasaka ,  Kiyotaka Miyano ,  Kyoichi Suguro

发明人： Kazuaki Nakajima ,  Yasushi Akasaka ,  Kiyotaka Miyano ,  Kyoichi Suguro

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/45 ,  H01L21/302

CPC分类号： H01L21/28247 ,  H01L21/76838 ,  H01L21/823835 ,  H01L29/456 ,  H01L2924/0002

摘要： A semiconductor device includes a semiconductor substrate, and a laminated film insulatively formed over the semiconductor substrate, wherein the laminated film includes a semiconductor film, a metal film of refractory metal formed on the semiconductor film, a conductive oxidation preventing film disposed between the metal film and the semiconductor film, for preventing oxidation of the semiconductor film in an interface between the metal film and the semiconductor film, and an oxide film formed on a side surface of the semiconductor film and formed to extend into upper and lower portions of the semiconductor film in a bird's beak form.

摘要翻译： 半导体器件包括半导体衬底和绝缘地形成在半导体衬底上的层叠膜，其中层压膜包括半导体膜，在半导体膜上形成的难熔金属的金属膜，设置在金属膜之间的导电氧化防止膜 以及半导体膜，用于防止半导体膜在金属膜和半导体膜之间的界面中的氧化，以及形成在半导体膜的侧表面上并形成为延伸到半导体膜的上部和下部的氧化膜 在鸟的嘴形式。

公开(公告)号：US07232751B2

公开(公告)日：2007-06-19

申请号：US11047975

申请日：2005-02-02

申请人： Yasushi Akasaka ,  Kazuaki Nakajima ,  Kiyotaka Miyano ,  Kyoichi Suguro

发明人： Yasushi Akasaka ,  Kazuaki Nakajima ,  Kiyotaka Miyano ,  Kyoichi Suguro

IPC分类号： H01L21/336

CPC分类号： H01L21/76897 ,  H01L21/28061 ,  H01L21/32051 ,  H01L21/76885 ,  H01L29/4941 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.

摘要翻译： 根据本发明的半导体器件的制造方法，通过将金属膜暴露于氧化气体，在形成于半导体基板的主面上的金属膜上形成氧化膜。 然后在还原气氛中还原氧化膜，并且在还原步骤中还原的金属膜的表面上形成保护膜。 以这种方式，可以防止对金属膜的表面的损坏。

公开(公告)号：US6162741A

公开(公告)日：2000-12-19

申请号：US982416

申请日：1997-12-02

申请人： Yasushi Akasaka ,  Kazuaki Nakajima ,  Kiyotaka Miyano ,  Kyoichi Suguro

发明人： Yasushi Akasaka ,  Kazuaki Nakajima ,  Kiyotaka Miyano ,  Kyoichi Suguro

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L23/52 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8232

CPC分类号： H01L21/28247 ,  H01L21/28061 ,  H01L21/32051 ,  H01L21/76834 ,  H01L21/76885 ,  H01L21/76897 ,  H01L29/4941 ,  H01L29/6656 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.

摘要翻译： 根据本发明的半导体器件的制造方法，通过将金属膜暴露于氧化气体，在形成于半导体基板的主面上的金属膜上形成氧化膜。 然后在还原气氛中还原氧化膜，并且在还原步骤中还原的金属膜的表面上形成保护膜。 以这种方式，可以防止对金属膜的表面的损坏。

公开(公告)号：US07078776B2

公开(公告)日：2006-07-18

申请号：US10867797

申请日：2004-06-16

申请人： Kazumi Nishinohara ,  Yasushi Akasaka ,  Kyoichi Suguro

发明人： Kazumi Nishinohara ,  Yasushi Akasaka ,  Kyoichi Suguro

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66583 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/105 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66628

摘要： A semiconductor device has a first semiconductor region formed in a semiconductor substrate and having a first conductivity type due to first-conductivity-type active impurities contained in the first semiconductor region, and a second semiconductor region formed between the first semiconductor region and the surface of the semiconductor substrate and having a second conductivity type due to second-conductivity-type active impurities contained in the second semiconductor region. The second semiconductor region contains first-conductivity-type active impurities, whose concentration is zero or smaller than a quarter of a concentration of the second-conductivity-type active impurities contained in the second semiconductor region. An insulating film and a conductor are formed on the second semiconductor region. Third and fourth semiconductor regions of the second conductivity type are formed at the semiconductor surface in contact with the side faces of the second semiconductor region. This semiconductor device is capable of suppressing net impurity concentration variations as well as threshold voltage variations to be caused by a short channel effect or manufacturing variations.

摘要翻译： 半导体器件具有形成在半导体衬底中并且由于第一半导体区域中包含的第一导电型有源杂质而具有第一导电类型的第一半导体区域，以及形成在第一半导体区域和第一半导体区域之间的第二半导体区域 并且由于第二半导体区域中包含的第二导电型有源杂质而具有第二导电类型。 第二半导体区域包含第一导电型有源杂质，其浓度为零或小于第二半导体区域中所含的第二导电型有源杂质浓度的四分之一。 绝缘膜和导体形成在第二半导体区域上。 在与第二半导体区域的侧面接触的半导体表面处形成第二导电类型的第三和第四半导体区域。 该半导体器件能够抑制净杂质浓度变化以及由短沟道效应或制造变化引起的阈值电压变化。