The present invention sets forth a new device comprising a PTC, and a transistor in direct physical contact with the PTC. The PTC has a first surface and a second surface wherein at least one of the surfaces is substantially flat. Preferably, the transistor comprises a MOSFET coupled to and located on a flat surface of one of the first and second surfaces of the PTC. The device further includes insulating material coupled to the PTC, a conductive pad coupled to the insulating material, and a conductor coupled between the conductive pad and a gate junction of the transistor. A similar conductive pad and conductor arrangement is provided for a source junction of the transistor. The MOSFET is coupled at a drain junction thereof to one of the first and second surfaces of the PTC, and the device includes a non-conductive encapsulating material around at least a portion of the transistor and the PTC. The combined PTC/MOSFET device provides switching and overload protection features. Alternative embodiments set forth multi-transistor arrangements with a PTC.