发明授权
US6103611A Methods and arrangements for improved spacer formation within a
semiconductor device
失效
用于改善半导体器件内的间隔物形成的方法和布置
- 专利标题： Methods and arrangements for improved spacer formation within a semiconductor device
- 专利标题（中）： 用于改善半导体器件内的间隔物形成的方法和布置
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申请号： US993830申请日： 1997-12-18
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公开(公告)号： US6103611A公开(公告)日： 2000-08-15
- 发明人: William G. En , Minh Van Ngo , Chih-Yuh Yang , David K. Foote , Scott A. Bell , Olov B. Karlsson , Christopher F. Lyons
- 申请人： William G. En , Minh Van Ngo , Chih-Yuh Yang , David K. Foote , Scott A. Bell , Olov B. Karlsson , Christopher F. Lyons
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/00 ; H01L21/3065
摘要：
Methods and arrangements are provided to increase the process control during the formation of spacers within a semiconductor device. The methods and arrangements include the use of non-functional or dummy lines, regions and/or patterns to create a topology that causes the subsequently formed spacers to be more predictable and uniform in shape and size.
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