发明授权
US6104078A Design for a semiconductor device having elements isolated by insulating
regions
失效
设计具有通过绝缘区隔离的元件的半导体器件
- 专利标题： Design for a semiconductor device having elements isolated by insulating regions
- 专利标题（中）： 设计具有通过绝缘区隔离的元件的半导体器件
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申请号： US941756申请日： 1997-09-30
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公开(公告)号： US6104078A公开(公告)日： 2000-08-15
- 发明人: Makio Iida , Mitsuhiro Saitou , Akitaka Murata , Hiroyuki Ban , Tadashi Suzuki , Toshio Sakakibara , Takayuki Sugisaka , Shoji Miura
- 申请人： Makio Iida , Mitsuhiro Saitou , Akitaka Murata , Hiroyuki Ban , Tadashi Suzuki , Toshio Sakakibara , Takayuki Sugisaka , Shoji Miura
- 申请人地址： JPX Kariya
- 专利权人： DENSO Corporation
- 当前专利权人： DENSO Corporation
- 当前专利权人地址： JPX Kariya
- 优先权： JPX6-216428 19940909; JPX7-226496 19950904
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L29/36
摘要：
A semiconductor device including a semiconductor substrate having a main surface. An insulating film is formed on the main surface of the semiconductor substrate. A semiconductor layer is placed on the insulating film. Side insulating regions extending from a surface of the semiconductor layer to the insulating film divide the semiconductor layer into element regions. The element regions are isolated from each other by the side insulating regions and the insulating film. The semiconductor substrate has a resistivity of 1.5 .OMEGA.cm or lower. A voltage at the semiconductor substrate is set to a given voltage.
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