发明授权
- 专利标题： Semiconductor device and method of manufacturing same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US720018申请日： 1996-09-27
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公开(公告)号： US6107661A公开(公告)日： 2000-08-22
- 发明人: Naoto Okabe , Tsuyoshi Yamamoto
- 申请人： Naoto Okabe , Tsuyoshi Yamamoto
- 申请人地址： JPX Kariya
- 专利权人： Nippondenso Co., Ltd.
- 当前专利权人： Nippondenso Co., Ltd.
- 当前专利权人地址： JPX Kariya
- 优先权： JPX7-253747 19950929; JPX7-253748 19950929; JPX7-190454 19960719
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/06 ; H01L29/739 ; H01L29/78 ; H01L29/76
摘要：
A concave channel type DMOS structure having an improved gate-to-source breakdown voltage are disclosed. By establishing a curvature at a corner portion of a lattice-like pattern in a groove portion for forming the concave channel structure, the shape of the tip of a three-dimensionally projecting portion of a semiconductor region determined by a plane angle of the corner portion in the lattice-like pattern and an inclination of the groove portion is rounded. That is, a three-dimensionally sharpened corner portion in the concave channel structure is rounded, and thereby electric field concentration at the corner portion is suppressed.
公开/授权文献
- US4062718A Heat sealing means 公开/授权日：1977-12-13