Invention Grant
US6114186A Hydrogen silsesquioxane thin films for low capacitance structures in
integrated circuits
失效
用于集成电路中低电容结构的氢倍半硅氧烷薄膜
- Patent Title: Hydrogen silsesquioxane thin films for low capacitance structures in integrated circuits
- Patent Title (中): 用于集成电路中低电容结构的氢倍半硅氧烷薄膜
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Application No.: US893653Application Date: 1997-07-11
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Publication No.: US6114186APublication Date: 2000-09-05
- Inventor: Shin-Puu Jeng , Kelly J. Taylor , Amitava Chatterjee
- Applicant: Shin-Puu Jeng , Kelly J. Taylor , Amitava Chatterjee
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: H01L21/312
- IPC: H01L21/312 ; H01L21/314 ; H01L21/316 ; H01L21/762 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/4763
Abstract:
An improved method is provided for integrating HSQ into integrated circuit structures and processes, especially those requiring multiple levels of interconnect lines. In a preferred embodiment, interconnect lines 14 are first patterned and etched on a substrate 10. A low-k material such as hydrogen silsesquioxane (HSQ) 18 is spun across the surface of the wafer to fill areas between interconnect lines. A capping layer such as SiO.sub.2 20 is applied to on top of the low-k material. The HSQ is then heated to cure. A thick SiO.sub.2 planarization layer 22 may then be applied and planarized. In other embodiments, the HSQ and SiO.sub.2 process steps can be repeated for multiple layers of HSQ.
Public/Granted literature
- US5362115A Multi-ring gasket Public/Granted day:1994-11-08
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