发明授权
US6118166A Thin-film microstructure sensor having a temperature-sensitive resistor
to provide a large TCR with little variation
失效
具有温度敏感电阻器的薄膜微结构传感器，以提供很小变化的大TCR
- 专利标题： Thin-film microstructure sensor having a temperature-sensitive resistor to provide a large TCR with little variation
- 专利标题（中）： 具有温度敏感电阻器的薄膜微结构传感器，以提供很小变化的大TCR
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申请号： US13900申请日： 1998-01-27
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公开(公告)号： US6118166A公开(公告)日： 2000-09-12
- 发明人: Hiroyoshi Shoji , Takayuki Yamaguchi , Junichi Azumi , Yukito Sato , Morimasa Kaminishi
- 申请人： Hiroyoshi Shoji , Takayuki Yamaguchi , Junichi Azumi , Yukito Sato , Morimasa Kaminishi
- 申请人地址： JPX Tokyo JPX Nagoya
- 专利权人： Ricoh Company, Ltd.,Ricoh Elemex Corporation
- 当前专利权人： Ricoh Company, Ltd.,Ricoh Elemex Corporation
- 当前专利权人地址： JPX Tokyo JPX Nagoya
- 优先权： JPX9-018243 19970131
- 主分类号： G01P5/12
- IPC分类号： G01P5/12 ; B81B7/00 ; G01F1/68 ; G01F1/692 ; G01J5/20 ; G01K7/18 ; G01N27/12 ; G01W1/11 ; H01C7/00 ; H01L27/14 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/82
摘要：
A thin-film microstructure sensor includes a substrate having an insulation layer. A thin-film platinum temperature-sensitive resistor is provided on the insulation layer of the substrate, the thin-film platinum temperature-sensitive resistor comprising a platinum layer, the platinum layer having a maximum crystal grain size above a reference grain size of 800 .ANG.. The thin-film platinum temperature-sensitive resistor is formed by a sputtering process to provide a temperature coefficient of resistance TCR above a reference TCR level of 3200 ppm.
公开/授权文献
- USD363258S Bus 公开/授权日：1995-10-17
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