发明授权
- 专利标题: Method for detecting defects in dielectric film
- 专利标题(中): 电介质膜缺陷检测方法
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申请号: US49201申请日: 1998-03-27
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公开(公告)号: US06118280A公开(公告)日: 2000-09-12
- 发明人: Hideki Matsunaga , Isao Suzuki , Hiroshi Tomita , Shiro Takeno , Akira Okada
- 申请人: Hideki Matsunaga , Isao Suzuki , Hiroshi Tomita , Shiro Takeno , Akira Okada
- 申请人地址: JPX Kanagawa-ken
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kanagawa-ken
- 优先权: JPXP09-079864 19970331
- 主分类号: G01N27/00
- IPC分类号: G01N27/00 ; G01N1/28 ; G01N21/84 ; H01L21/66
摘要:
Disclosed are a method and an apparatus for detecting a defect in a dielectric film. The dielectric film is electrified in an electrolyte solution containing a metal in such a manner the dielectric film is charged negative, thereby the metal is deposited on the dielectric film at a position corresponding to the defect. The detecting method has a first deposition step for forming a first metal deposit on the dielectric film in an annular form surrounding the position corresponding to the defect; and a second deposition step for forming a second metal deposit located on the position corresponding to the defect, on the dielectric film. The detecting apparatus has a vessel for accommodating the electrolyte solution; a first electrode for electrifying the dielectric film and a second electrode; and an electric power source for controlably applying a voltage to electrifying between the first electrode and the second electrode in which a value and a direction of the applied voltage is variable.
公开/授权文献
- USD376223S Glass shade 公开/授权日:1996-12-03
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