发明授权
- 专利标题： Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
- 专利标题（中）： 使用双极电极组件平坦化金属化半导体晶片的方法和装置
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申请号： US96309申请日： 1998-06-11
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公开(公告)号： US6121152A公开(公告)日： 2000-09-19
- 发明人: John A. Adams , Gerald A. Krulik , Everett D. Smith
- 申请人： John A. Adams , Gerald A. Krulik , Everett D. Smith
- 申请人地址： AZ Phoenix
- 专利权人： Integrated Process Equipment Corporation
- 当前专利权人： Integrated Process Equipment Corporation
- 当前专利权人地址： AZ Phoenix
- 主分类号： B23H5/08
- IPC分类号： B23H5/08 ; C25F3/16 ; H01L21/321 ; H01L21/302
摘要：
Planarization of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly scanned and a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.
公开/授权文献
- US5342168A Adjustable radial-flow diffuser 公开/授权日：1994-08-30
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