公开(公告)号：US5507732A

公开(公告)日：1996-04-16

申请号：US318598

申请日：1994-10-05

申请人： Robert W. McClure ,  Ernie P. Gerstmar ,  Walter R. Parkola ,  Matthew S. Gibbons ,  Everett D. Smith

发明人： Robert W. McClure ,  Ernie P. Gerstmar ,  Walter R. Parkola ,  Matthew S. Gibbons ,  Everett D. Smith

IPC分类号： A61M25/00 ,  A61M39/06 ,  A61M5/14

CPC分类号： A61M39/06 ,  A61M25/00 ,  A61M25/0097 ,  A61M2025/0098 ,  A61M2039/062 ,  Y10S604/905

摘要： The present invention is accomplished by providing a catheter manifold (15) having a manifold catheter lumen (115) extending longitudinally therethrough plus a rotationally symmetrical, conically tapering, elastomeric distal seal (65) for gripping the catheter shaft (70), the proximal end of the distal seal (65) having a smaller diameter than the distal end, the distal end of the manifold catheter lumen (115) being conically tapered and sized for a friction fit with the distal seal (65) when the distal seal (65) is inserted into the distal end of the manifold catheter lumen (115), the distal seal (65) having a longitudinally extending distal seal catheter lumen (120). In addition, the catheter manifold (15) has a rotationally symmetrical, conically tapering, elastomeric proximal seal (55) for gripping the guidewire shaft (135), the proximal end of the proximal seal (55) having a larger diameter than the distal end, the proximal end of the manifold catheter lumen (115) having a conical taper sized for a friction fit with the proximal seal (55 ) when the proximal seal (55) is inserted into the proximal end of the manifold catheter lumen (115), the proximal seal (55) having a longitudinally extending proximal seal catheter lumen (110). The ratio of the proximal seal (55) length to the proximal seal (55) major diameter is about 2 to 1. The ratio of the distal seal (65) length to the distal seal (65) major diameter is about 2 to 1. The ratio of the distal seal (65) minor diameter to the distal seal (65) major diameter is about 1 to 1.5 and the ratio of the proximal seal (55) minor diameter to the proximal seal (55) major diameter is about 1 to 1.5. The proximal (55) and distal seals (65) are made of a 30-50 Shore A USP Class VI elastomer material. In another embodiment, conventional sealing such as threaded parts, adhesive or a Tuohy-Borst connector can be substituted for either of applicant's compression seals.

公开(公告)号：US06184139B2

公开(公告)日：2001-02-06

申请号：US09153993

申请日：1998-09-17

申请人： John A. Adams ,  Everett D. Smith ,  Stephen C. Schultz

发明人： John A. Adams ,  Everett D. Smith ,  Stephen C. Schultz

IPC分类号： H01L21302

CPC分类号： B24B37/042 ,  B24B23/03 ,  Y10S977/888

摘要： A method and apparatus for improving uniformity of the rate of removal of material from the surface of a semiconductor substrate by chemical mechanical polishing. In accordance with the invention, the semiconductor substrate is subjected to a combination of polishing motions, including orbital motion, and at least one additional polishing motion selected from rotational, oscillating, sweeping, and linear polishing motions. The invention also provides an improved method for conditioning polishing pads to provide more uniform conditioning and to extend their useful life span.

摘要翻译： 一种用于通过化学机械抛光改善材料从半导体衬底的表面去除速率的均匀性的方法和装置。 根据本发明，半导体衬底经受包括轨道运动在内的抛光运动和从旋转，摆动，扫掠和线性抛光运动中选择的至少一个附加抛光运动的组合。 本发明还提供了一种用于调节抛光垫以提供更均匀调节并延长其使用寿命的改进方法。

公开(公告)号：US6121152A

公开(公告)日：2000-09-19

申请号：US96309

申请日：1998-06-11

申请人： John A. Adams ,  Gerald A. Krulik ,  Everett D. Smith

发明人： John A. Adams ,  Gerald A. Krulik ,  Everett D. Smith

IPC分类号： B23H5/08 ,  C25F3/16 ,  H01L21/321 ,  H01L21/302

CPC分类号： B23H5/08 ,  C25F3/16 ,  H01L21/32115 ,  Y10S438/977

摘要： Planarization of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly scanned and a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.

摘要翻译： 在半导体晶片制造中的金属互连的平面化是通过提供扫描的双极电极组件和半导体晶片的单个金属化表面之间的相对运动来进行的，而不需要与晶片的物理接触或与其直接电连接。

公开(公告)号：US06500055B1

公开(公告)日：2002-12-31

申请号：US09664125

申请日：2000-09-18

申请人： John A. Adams ,  Everett D. Smith ,  Stephen C. Schultz

发明人： John A. Adams ,  Everett D. Smith ,  Stephen C. Schultz

IPC分类号： B24B100

CPC分类号： B24B37/042 ,  B24B23/03 ,  Y10S977/888

摘要： A method and apparatus for improving uniformity of the rate of removal of material from the surface of a semiconductor substrate by chemical mechanical polishing. In accordance with the invention, the semiconductor substrate is subjected to a combination of polishing motions, including orbital motion, and at least one additional polishing motion selected from rotational, oscillating, sweeping, and linear polishing motions. The invention also provides an improved method for conditioning polishing pads to provide more uniform conditioning and to extend their useful life span.

摘要翻译： 一种通过化学机械抛光改善材料从半导体衬底的表面去除速率的均匀性的方法和装置。 根据本发明，半导体衬底经受包括轨道运动在内的抛光运动和从旋转，摆动，扫掠和线性抛光运动中选择的至少一个附加抛光运动的组合。 本发明还提供了一种用于调节抛光垫以提供更均匀调节并延长其使用寿命的改进方法。

公开(公告)号：US6132586A

公开(公告)日：2000-10-17

申请号：US96220

申请日：1998-06-11

申请人： John A. Adams ,  Gerald A. Krulik ,  Everett D. Smith

发明人： John A. Adams ,  Gerald A. Krulik ,  Everett D. Smith

IPC分类号： C25D5/00 ,  H01L21/288 ,  C25D5/02

CPC分类号： H01L21/7684 ,  H01L21/2885 ,  C25D5/00

摘要： Plating of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.

摘要翻译： 通过提供双极电极组件与半导体晶片的单个金属化表面之间的相对运动，而不需要与晶片的物理接触或与其直接电连接来进行半导体晶片制造中的金属互连的电镀。

公开(公告)号：US6143155A

公开(公告)日：2000-11-07

申请号：US96131

申请日：1998-06-11

申请人： John A. Adams ,  Gerald A. Krulik ,  Everett D. Smith

发明人： John A. Adams ,  Gerald A. Krulik ,  Everett D. Smith

IPC分类号： C25D5/04 ,  C25D7/12 ,  H01L21/288 ,  H01L21/321 ,  H01L21/768 ,  C25D5/00

CPC分类号： C25D7/001 ,  C25D5/04 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/7684

摘要： Simultaneous non-contact plating and planarizing of copper interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode and a metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.

摘要翻译： 通过提供双极电极和半导体晶片的金属化表面之间的相对运动，而不需要与晶片的物理接触或与其直接电连接，来实现半导体晶片制造中的铜互连的同时非接触电镀和平坦化。