A method of making a semiconductor device includes forming gate electrode over a substrate and a protective layer over the gate electrode. A portion of the protective layer is selectively removed to expose a peripheral region of the gate electrode. A remainder of the protective layer remains disposed over a central region of the gate electrode. An upper portion of the peripheral region of the gate electrode is then removed typically leaving an underlying portion. Often, a dopant material is implanted into the substrate adjacent to and beneath the underlying portion to simultaneously form lightly-doped and heavily-doped regions beneath and adjacent to the underlying portion, respectively. In addition, all or part of the underlying portion may be oxidized to provide a gate electrode with reduced width.